IRFR3412 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
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IRFR3412
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94373
IRFR3412
IRFU3412
HEXFET© Power MOSFET
International
TOR Rectifier SMPS MOSFET
Applications
. Switch Mode Power Supply (SMPS) Voss RDS(on) max ID
q 1lo.tt.or Drive 100V 0.0259 48A©
0 Bridge Converters
o All Zero Voltage Switching
Benefits
q Low Gate Charge Qg results in Simple ttlc,,, , . t,tiiit,
Drive Requirement ' fit,')) ' Niii'F'
q Improved Gate, Avalanche and Dynamic 'lil-ij';','; '. ,
dv/dt Ruggedness '-.
q Fully Characterized Capacitance and
Avalanche Voltage and Current D-Pak l-Pak
. Enhanced Body Diode dv/dt Capability IRFR3412 IRFU3412
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 48©
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 34© A
IDM Pulsed Drain Current (D 190
PD @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 6.4 V/ns
TJ Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 second 300(1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 48 © MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 190 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25''C, ls = 29A, VGs = 0V ©
trr Reverse Recovery Time - 68 100 ns TJ = 125°C, IF = 29A
Qrr Reverse RecoveryCharge - 160 240 nC di/dt = 100Alps G)
IRRM Reverse RecoveryCurrent - 4.5 6.8 A
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
1/22/02
IRFR/U3412
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V N/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.10 - V/''C Reference to 25°C, ID = 1mA ©
Rosmn) Static Drain-to-Source On-Resistance - - 0.025 Q VGs = 10V, ID = 29A (9
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vros = I/cs, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 95V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, To = 150°C
I Gate-to-Source Forward Leakage - - 100 A N/ss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 n N/ss = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 25 - - S VDs = 50V, ID = 29A
Qg Total Gate Charge - 59 89 ID = 29A
Qgs Gate-to-Source Charge - 21 32 nC l/ns = 50V
di Gate-to-Drain ("Miller") Charge - 17 26 VGS = 10V, ©
tum”) Turn-On Delay Time - 19 - VDD = 50V
tr Rise Time - 68 - ns lo = 29A
tam) Turn-Off Delay Time - 44 - Rs = 6.89
tf Fall Time - 37 - VGs = 10V (9
Ciss Input Capacitance - 3430 - l/ss = 0V
Coss Output Capacitance - 270 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Coss Output Capacitance - 1040 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - VGS = 0V, Vros = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 270 - VGS = 0V, VDs = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 160 mJ
IAR Avalanche Currents - 29 A
EAR Repetitive Avalanche Energy© - 14 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .05
RQJA Junction-to-Ambient (PCB mount)* - 50 'C/W
ReJA Junction-to-Ambient - 110
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L = 0.38mH, Rs = 259,
, (See Figure 12a)
IAS = 29A
© lsos 29A,
di/dt S 420A/ps, VDD S V(BR)DSS,
TJs150°c
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
© Pulse width S 300ps; duty cycle S 2%.
© Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss
©Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
