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IRFR320IRN/a25200avai400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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IRFR320-IRFR320PBF-IRFR320TR-IRFR320TRR-IRFU320-IRFU320PBF
400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Ilnter,,tritiipti,tall
142R Rectifier
PD-9.598A
ilRFR320
HEXFET® Power MOSFET
IRFU320
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Surface Mount (IRFR320)
0 Straight Lead (IRFU320)
0 Available in Tape & Reel
0 FastSwitching
0 Ease of Paralleling
l/DSS =400V
RDS(on) = 1.89
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-PAK 1-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
_ d I - -- Parameter - - --_--_ - Max. - - - -r-t"'rn-iii's"
ID @ Tc = 25°C 1 Continuous Drain Current, I/ss @ 10 V 3.1
-.lpf)_Tp_-----100_oc l Continuous Drain Current, I/css @ 10 V 2.0 - - A
[IDM (Pulsed Drain Current (i) ___ - - - - 12
fhfUrp_r-f5oC Power Dissipation 42 {__H‘_ W
PD @ TA = 25°C Power Dissipation (PCB Mount)" - W r i - - 2.5
- - - _r-lryti1rIe_ra.t_iryLFa_ctp_r, 0.33 WPC
Linear Derating Factor (PCB Mount)" - - 0.020
Ves - - -G1tet1-1erel/E1tltr, :20 V
1 EAS l Single Pulse Avalanche Energy 2 -._.16_0, ml
I 1m - - PyitrtyEtCCy_rsre.r1fiU,, 3.1 A
EAR . . Repetitive Avalanche Energy C) 4.2 -_-___ _m_J -
dv/dt Peak Diode Récovery dv/dt C3) - --- --_-- - 4.0 - - V/ns
TU, Tsms Junction and SitSCag1t1Tsmperature Range -55 19 L159“ - Q C
_..------' Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
F - - Ea:a_nle_t§r__ Min. Typ. - FQMZ):V¥77UrnTts
jigici Junction-to-Case - - t___, {d 3.0
Rm 1 Junction-to-Argent 19991 mount)“ - - _ ~50 °C/W
ReJA [Junction-to-Aa-ant'' J - - 110
** When mounted on 1" square PCB (FR-4 or G-1O Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR320, iRFU320
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(anss Drain-to-Source Breakdown Voltage 400 - - V VGs=0V, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.51 - V/°C Reference to 25"C, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance -...- - 1.8 f2 VGs=10V, b=1.9A (4D
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 250PA
ggs Forward Transconductance 1.7 - - S vos=5ov, 10:1.9A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=400V, VGSZOV
- - 250 . vos=32ov, VGS=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 1 VGs=-20V
ch; Total Gate Charge - - 20 l, |D=3.3A
Qgs Gate-to-Source Charge - - 3.3 no ,:' Vos=320V
di Gate-to-Drain ("Miller") Charge - - 11 , VGS=10V See Fig. 6 and 13 3D
Won) Turn-On Delay Time -- IO - VDD=200V
tr Rise Time ' - 14 - ns ID=3.3A
tos) Turn-Off Delay Time 1 - 30 - Rs=18n
t, Fall Time 1 - 13 - RD=569 See Figure 10 ©
Lo Internal Drain Inductance 1 - 4.5 - 2:11:13 2% 1 I D
nH from package 9Q:
Ls Internal Source Inductance - 7.5 - and center 6f 15:
die contact s
Ciss Input Capacitance - 350 - Ves=ov
Cogs Output Capacitance - 120 - pF bbs-- 25V
Crss Reverse Transfer Capacitance -q.., 47 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter 1 Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 3 1 MOSFET symbol D
(Body Diode) ' A showing the Ci)
1 ISM Pulsed Source Current --.. - 12 integral {averse G 13.
', (Body Diode) C) p-n junction diode, s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, ls=3.1A, Ves=OV ©
i' trr Reverse Recovery Time - 270 600 ns TJ=25°C, lr=3,3A
'i', Orr Reverse Recovery Charge - 1.4 3.0 11C dildt=100A/us ©
1 ton Fo rward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls-rluo)
Notes:
(IC) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=29mH
Re=25§2, iAs=3.1A (See Figure 12)
© Isoss.1A, di/dtsi65A/prs, VDDSV(BR)DSS.
TJS1 50°C
© Pulse width f, 300 us; duty cycle 52%.
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