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IRFR310IRN/a25200avai400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR310PBFIRN/a100avai400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR310TRIRN/a75000avai400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFU310三星N/a30000avai400V Single N-Channel HEXFET Power MOSFET in a I-Pak package


IRFR310TR ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternatiqnal PD-9.597A TOR Rectifier IRFR310 HEXFETO Power MOSFET IRFU31 O q Dynamic dv/dt ..
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IRFR320 ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.598A 1:212 Rectifier IRFR320 HEXFET® Power MOSFET |RFU320 q Dynamic dv/dt ..
IRFR320BTM ,400V N-Channel B-FET / Substitute of IRFR320 & IRFR320AFeaturesThese N-Channel enhancement mode power field effect • 3.1A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK TO-252AA l-PAK TO-251AA Absolute Maximum Ratings - - 1 d Paramete ..
IRFR320PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
ISL83220ECA ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/ReceiversFEATURES0kbpNO. OF DATA MANUAL AUTOMATIC S- PART NO. OF NO. OF MONITOR Rx. RATE Rx. ENABLE READY PO ..
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ISL83220ECV-T , ±15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers
ISL83220ECVZ-T , ±15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transmitters/Receivers
ISL83220EIA ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of each  Any System Requiring RS-232 Communication Portsdevice comprising the ICL32XXE 3V ..
ISL83220EIB ,+/-15kV ESD Protected/ +3V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transmitters/ReceiversFeatures1Microamp, 250kbps, RS-232 • ESD Protection for RS-232 I/O Pins to ±15kV (IEC1000)Transmitt ..


IRFR310-IRFR310PBF-IRFR310TR-IRFU310
400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
1rttettatiii9!yg
EOR Rectifier
_~I .. _ - dh'% ',n 'W'eht,"s."rc' _ L
PD-9.597A
IFlFR310
HEXFETO Power MOSFET
It Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
IRFU31O
0 Surface Mount (IRFR310)
0 Straight Lead (IRFU310)
0 Available in Tape & Reel
It FastSwitching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
r, RDS(OH) = 3.69
s ID = 1.7A
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
TO-252AA
TO-251AA
Parameter
lo @ Tc = 25°C Continuous Drain Current, VGs © 10 V
10 Q) Tc = 100°C Continuous Drain Current, Vss @ 10 V
IDM Pulsed Drain Current CD
PD @ Tc = 25°C Power Dissipation
Po @ TA = 25°C Power Dissipation (PCB Mount)"
Linear Degting fjytity_r__.,
Linear Derating Factor (PCB Mount):
Vss Gate-to-Source Voltage
EAS w ._, Single Pulse Avalanche Energy ©
lan Avalanche Current C) Hf, -
EAR ' Repetitive Avalanche Energy 6)
dv/dt Peak Diode Recovery dv/dt © _.___,.__-
To, Tsm Junction and Storage Temperature Range -55 to +150 - D C
F“ Soldering Temperature, for 10 seconds 260 (1 .6mmv le, casel_ ___._7__ -
Thermal Resistance
Parameter 1_)rir_u, A Typ. I "ijiaT/." -GiTtr!
RM: ---/-1-/it-..i-.'a)1t-f.1e L, A - 5:IC_..
Ram Junction-to-Ambler-tWCB mount)" - - 50 °C/W
Ram _______ Junction-to-Ambient L - -c, -_-" 110 i
** When mounted on 1" square PCB (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
|RFR310, IRFU31p
Electrical Characteristics iii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V Vos=OV, ID: 250PA
AV(an)oss/ATJ Breakdown Voltage Temp. Coefficient - 0.47 - V/°C Reference to 25°C, ID: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 3.6 n Vtss=10V, Io=1.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250PA
2s Forward Transconductance 0.97 - - S Vos=50V, |D=1.0A C4)
loss Drain-to-Source Leakage Current - - 25 pA Vos=400V, Var=0V
- - 250 Vos=32OV, Vas=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - -.-P. -100 Vas=-20V
ch Total Gate Charge - - 12 ID=2.0A
Qgs Gate-to-Source Charge - - 1.9 nC VDs=320V
di Gate-to-Drain ("Miller") Charge - - 6.5 Ves=10V See Fig. 6 and 13 ©
Gen) Turn-On Delay Time - 7.9 - VDD=200V
tr Rise Time - 9.9 - ns b=2.OA
tum) Turn-Off Delay Time - 21 - Re=249
t; Fall Time - 11 - Ro=95£2 See Figure 10 C)
Lo Internal Drain Inductance ._.-.r. 4.5 - t2t"jhtie.') D
nH from package GE
Ls Internal Source inductance - 7.5 --.. Ind center Of
die contact s
Ciss Input Capacitance - 170 - Vss=OV
Cass Output Capacitance - 34 - pF 1/ns=25V
Crss Reverse Transfer Capacitance - 6.3 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 1 7 MOSFET symbol D
(Body Diode) ' A showing the : 'it)
ISM Pulsed Source Current - - 6 0 integral reverse t3 (tLl
(Body Diode) G) . p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=2500, Is=1.7A, I/ss-UN ©
in Reverse Recovery Time - 240 540 ns TJ=25°C, IF=2.OA
er Reverse Recovery Charge - 0.85 1.6 ”C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
G) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=52mH
Re=259, lAs=1.7A (See Figure 12)
© 15031.7A, di/dts40A/ps, VDDSV(BH)DSS,
TJS150°C
Ct) Pulse width S 300 us; duty cycle 52%.
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