IRFR2905ZTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFU2905ZPbFIRFR2905ZPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain C ..
IRFR310 ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR310B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 1.7A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFR310BTF ,400V N-Channel B-FET / Substitute of IRFR310 & IRFR310AIRFR310B / IRFU310BNovember 2001IRFR310B / IRFU310B400V N-Channel MOSFET
IRFR310BTM ,400V N-Channel B-FET / Substitute of IRFR310 & IRFR310AFeaturesThese N-Channel enhancement mode power field effect • 1.7A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFR310PBF ,400V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK l-PAK
TO~252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. -___,_t_ ..
ISL83078EIBZA , ±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83083EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83085EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83085EIBZ-T , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83088EIBZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
ISL83088EIUZ , -15kV ESD Protected, 5V, Full Fail-Safe, Fractional (1/8) Unit Load, RS-485/RS-422 Transceivers
IRFR2905ZTRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95943B
riterryottyol lRFR2905ZPbF
ISER Rectifier IFlFU2905ZPbF
Features HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to ijax
Lead-Free
VDSS = 55V
RDS(on) = 14.5mQ
Description ID = 42A
This HEXFET0 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additional features 'git
of this design are a 175°C junction operating sej,,j,i,))t, '9',e
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
. . D-Pak l-Pak
applications.
IRFR2905ZPbF IRFU2905ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 59
ko @ Tc = 100°C Continuous Drain Current, Vss @ 10V 42 A
ID © Tc = 25°C Continuous Drain Current, l/ss @ 10V (Package Limited) 42
IBM Pulsed Drain Current OD 240
PD ©Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.72 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS(rhermawvmited) Single Pulse Avalanche Energy© 55 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 82
IAR Avalanche Current OD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © m J
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter . Max.
ReJC u on- 1 .38
ReJA u on- mou 40
ReJA u on- 110
HEXFETO is a registered trademark of International Rectifier.
1
09/16/10
IRFR/U2905ZPbF
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V l/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.053 -- V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.1 14.5 mg Vss = 10V, ID = 36A ©
VGsoh) Gate Threshold Voltage 2.0 - 4.0 v Vos = Vss, ID = 250pA
gfs Forward Transconductance 20 - - S Vos = 25V, ID = 36A
lross Drain-to-Source Leakage Current - - 20 pA l/ns = 55V, Vss = 0V
-- -- 250 Vrss = 55V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Ves = -20V
th Total Gate Charge - 29 44 ID = 36A
As Gate-to-Source Charge - 7.7 - nC l/rs = 44V
di Gate-to-Drain ("Miller") Charge -- 12 -- Ves = 10V ©
Re Gate Input Resistance - 1.3 - n f= 1MHz, open drain
tum) Turn-On Delay Time - 14 - Va, = 28V
tr Rise Time - 66 - ID = 36A
td(off) Turn-Off Delay Time - 31 - ns Rs = 15 n
t, Fall Time -- 35 -- Vss = 10V ©
Ln Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) /\ l
Ls Internal Source Inductance - 7.5 - from package 6&4 /
and center of die contact s
Ciss Input Capacitance -- 1380 -- Vss = 0V
Coss Output Capacitance - 240 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Cass Output Capacitance - 820 - Vas = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 190 - Vss = OV, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 300 -- Vss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the ‘7]:
ISM Pulsed Source Current - - 240 integral reverse G (rd,
(Body Diode) CD p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 36A, VGS = 0V ©
trr Reverse Recovery Time -- 23 35 ns T J = 25°C, IF = 36A, VDD = 28V
a,, Reverse Recovery Charge - 16 24 n0 di/dt = 100A/ps OD
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
