IRFR24N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFET
IRFR24N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 95mΩ 24ABenefits Low Gate-t ..
IRFR2607Z ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFU2607ZPbFIRFR2607ZPbFAbsolute Maximum RatingsParameter UnitsMax.Continuous Drain Cu ..
IRFR2607ZTRPBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures®HEXFET Power MOSFET
IRFR24N15DTRPBF
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
PD - 95370B
IRFR24N15DPbF
IRFU24N15DPbF
HEXFET© Power MOSFET
0 High frequency DC-DC converters VDSS RDsion) max In
150V 95mf2 24A
Benefits
q Low Gate-to-Drain Charge to Reduce 14iii) 4i,rr
Switching Losses Ri' l ff: _
q Fully Characterized Capacitance Including l A _
Effective Coss to Simplify Design, (See
App. Note AN1001) D-Pak I-Pak
. Fully Characterized Avalanche Voltage IRFR24N15DPbF lRFU24N15DPbF
and Current
. Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 24
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 17 A
IDM Pulsed Drain Current oo 96
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
Vas Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 4.9 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rout, Junction-to-Case - 1 .1
ReJA Junction-to-Ambient (PCB mount)* - 50 °CNV
RQJA Junction-to-Ambient - 1 10
Notes C) through (S),* are on page 10
1
09/22/10
IlRFlR/U24N15DPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V Vas = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.18 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 82 95 mn Vas = 10V, ID = 14A (9
Vegan) Gate Threshold Voltage 3.0 - 5.0 V VDS = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 150V, Vss = 0V
- - 250 Vos = 120V, l/ss = 0V, To = 150°C
IG Gate-to-Source Forward Leakage - - 100 n A Vas = 30V
SS Gate-to-Source Reverse Leakage - - -100 l/ss = -30V
Dynamic @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 8.2 - - S Vos = 25V, ID = 14A
09 Total Gate Charge - 30 45 ID = 14A
095 Gate-to-Source Charge - 7.4 11 " Vos = 120V
di Gate-to-Drain ("Miller") Charge - 17 26 l/ss = 10V, (9
tdwn) Turn-On Delay Time - 11 - VDD = 75V
tr Rise Time - 53 - ns ID = 14A
td(ott) Turn-Off Delay Time - 19 - Rs = 6.8f2
tt Fall Time - 15 - Vss = 10V ©
Ciss Input Capacitance - 890 - Vss = 0V
Coss Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz
Coss Output Capacitance - 1460 - Vas = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 95 - Vas = 0V, VDS = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 200 - VGS = 0V, VDS = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© -- 170 mJ
IAR Avalanche Current© - 14 A
EAR Repetitive Avalanche Energy© - 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 24 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 5
(Body Diode) (D - - 96 p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V Tu = 25°C, IS = 14A, Vas = 0V (9
trr Reverse Recovery Time - 110 - ns Tu = 25°C, IF = 14A
a,, Reverse RecoveryCharge - 450 - nC di/dt = 100A/ps CO
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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