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IRFR2307Z
AUTOMOTIVE MOSFET
PD - 96910
International
TOR. Rectifier AUTOMOTIVE MOSFET IRFR2307Z
IRFU2307Z
Features
.Advanced Process Technology HEXFET® Power MOSFET
.UItra Low On-Resistance
.175°C Operating Temperature D
.Fast Switching VDSS = 75V
.Repetitive Avalanche Allowed up to ijax
G FN, RDS(on) = 16mQ
Description
Specifically designed for Automotive applications, s ID = 42A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating 14it 1(,it
temperature, fast switching speed and improved Ri' l, - V
repetitive avalanche rating . These features com- I.
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications. D-Pak l-Pak
IRFH2307Z |RFU2307Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10V (Silicon Limited) 53
ID @ To = 100°C Continuous Drain Current, Vas © 10V 38 A
ID @ Tc = 25°C Continuous Drain Current, Vas © 10V (Package Limited) 42
'DM Pulsed Drain Current C) 210
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.70 W/°C
Vas Gate-to-Source Voltage 2 20 V
EAsuThermawiimited) Single Pulse Avalanche Energy© 100 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 140
IAR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Reuc Junction-to-Case - 1.42
Re“ Junction-to-Ambient (PCB mount) C/)(8) - 40 °C/W
ReJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
1 0/20/04
IRFR/U2307Z
International
IEER Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.072 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 12.8 16 mn l/ss = 10V, ID = 32A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 100pA
gfs Forward Transconductance 30 - - S l/rss = 25V, ID = 32A
IDSS Drain-to-Source Leakage Current - - 25 PA l/rss = 75V, Vss = 0V
- - 250 Vos = 75V, l/ss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -2OO Vss = -20V
a, Total Gate Charge - 50 75 ID = 32A
Qgs Gate-to-Source Charge - 14 - nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 19 - Vss = 10V ©
tam) Turn-On Delay Time - 16 - VDD = 38V
t, Rise Time - 65 - ID = 32A
tdiott) Turn-Off Delay Time - 44 - ns Rs = 10 Q
t, Fall Time - 29 - l/ss = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead, _ _ D
nH 6mm (0.25in.) ii/rr/ri-'),
Ls Internal Source Inductance - 7.5 - from package G' \/$/
and center of die contact s
Ciss Input Capacitance - 2190 - Vss = 0V
Coss Output Capacitance - 280 - Vos = 25V
Crss Reverse Transfer Capacitance - 150 - pF f = 1.0MHz
Coss Output Capacitance - 1070 - Vss = 0V, Vrys = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 190 - Ves = 0V, Vos = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 400 - Vas = 0V, Vros = 0V to 60V (4D
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol (r' a
(Body Diode) A showing the E
ISM Pulsed Source Current - - 210 integral reverse G E
(Body Diode) C) p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 32A, VGS = 0V ©
trr Reverse Recovery Time -- 31 47 ns T J = 25°C, IF = 32A, VDD = 38V
a,, Reverse Recovery Charge - 31 47 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
