IRFR224 ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.
Absolute Maximum Ratings
D-PAK
TO-252AA
PD-9.600A
IRFR224
IRFU224
I- ..
IRFR224TR ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR224TRPBF , Power MOSFET
IRFR224TRPBF , Power MOSFET
IRFR2307Z ,AUTOMOTIVE MOSFETapplications.IRFR2307Z IRFU2307ZAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous ..
IRFR230B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 7.5A, 200V, R = 0.4Ω @V = 10 VDS(on) ..
ISL81483IB ,1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsData rates up to 5Mbps are achievable by using the • High Node Count NetworksISL81487, ..
ISL81485IB ,5V/ 30Mbps/ RS-485/RS-422 TransceiverApplicationsDriver (Tx) outputs are short circuit protected, even for • SCSI “Fast 20” Drivers and ..
ISL81486IUZ ,5 V, ultra high speed, PROFIBUS, RS-485/RS-422 transceiver.ApplicationsReceiver (Rx) inputs feature a “fail-safe if open” design, • SCSI “Fast 40” Drivers and ..
ISL81487EIB ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsISL81487E, which
ISL81487EIP ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8487E, ISL81487L, ISL81487E®Data Sheet December 2003 FN6051.2±15kV ESD Protected, 1/8 Unit Load, ..
ISL81487IB ,1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8487, ISL81483, ISL81487® Data Sheet December 2003 FN6050.21/8 Unit Load, 5V, Low Power, High Sp ..
IRFR224-IRFR224TR-IRFU224
250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.600A
mternatiional
Bait Rectifier . IRF R224
HEXFET® Power MOSFET I R FU 224
o Dynamic dv/dt Rating .
o Repetitive Avalanche Rated D -
0 Surface Mount (IRFR224) VDSS - 250V
0 Straight Lead (IRFU224)
0 Available in Tape & Reel , ‘ RDS(0n) = 1.19
o FastSwitching
" Ease of Paralleling
S ID=38A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness,
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount applications. D-PAK I-PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
1 Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss © 10 V 3.8
In @ To = 100°C Continuous Drain Current, Ves @ 10 V 2.4 A
IDM Pulsed Drain Current C) - - - _115 I _
PD @ To = 25°C Power Dissipation 42 _ IN
PD @ TA-- 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.33 W PC
Linear Derating Factor (PCB Mount)" 0.020 -
Ves Gate-to-Source Voltage _ - i20 " V
EAs Single Pulse Avalanche Energy © _,_.__._.__._1(i_), - _ - mJ
JAR Avalanche Current (D 3.8 A
EAR Repetitive Avalanche Energy (i) 4.2 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
' TJ, TSTG Junction and Storage Temperature Range -55 to +150 _ QC
Soldering Temperature, for 10 seconds 260 (1.6mm from case) l
Thermal Resistance
Parameter Min. Typ, L, Max. _ _Uvrj_its
Rm Junction-to-Case - - 3.0
RNA Junction-to-Ambient (PCB mount)" - - 50 °C/W
Ram - -clei.ttn_-tt-Ambient - T = - - _1_1p, -
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR224, IRFU224
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 250 - - V Ves=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.36 - VPC Reference to 25°C, 10: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 1.1 Q VGs=1OV, |n=2.3A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGS. Io: 250MA
gis Forward Transconductance 1.5 - - S Vpszsov, ID=2.8A ©
loss Drain-to-Source Leakage Current - - 25 WA VDs=250V, Var=0V
- - 250 Vos=200V, VGs=OV, TJ=125°C
less Gate-to-Source Forward Leakage -...- - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20i/
ch Total Gate Charge i - - 14 lo=4.4A
Qgs Gate-to-Source Charge I - - 2.7 I 1hos=200V
di Gate-to-Drain ("Miller") Charge - - 7.8 Vss=10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 7.0 - VDD=125V
tr Rise Time - 13 - n s |D=4.4A
tum) Tu rn-Off Delay Time - 20 - Rs--18n
t1 Fall Time - 12 -.. RD=28Q See Figure 10 ©
Ln internal Drain Inductance - 4.5 - E $111121" 212: ') D
nH from package 6Q:
Ls Internal Source Inductance - 7.5 - - apd center Of
die contact s
Ciss Input Capacitance - 260 - Vss--0V
Coss Output Capacitance - 77 - pF VDs=25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 8 , MOSFET symbol D
(Body Diode) . j A showing the PW“)
ISM Pulsed Source Current - - 15 integral reverse G D.
(Body Diode) C) p-n junction diode. s
I/so Diode Forward Voltage - - 1.8 V TJ=25°C, Is=3.8A, ves=ov 3D
trr Reverse Recovery Time - 200 400 ns TJ=25°C, IF=4.4A
ck, Reverse Recovery Charge - 0.93 1.9 wc di/dt--100A/ws (g)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=14mH
RG=259, IAS=3.8A (See Figure 12)
© ISDSSBA, di/dtg0A/ws, VDDSV(BR)DSS.
TJS1 50°C
© Pulse width 3 300 us; duty cycle 32%.
