IRFR15N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.165Ω 17A Lead-FreeBenefit ..
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IRFR15N20DTRLP
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95355A
International
TOR lectifier |RFR15N20DPbF
" SMPS MOSFET |RFU15N20DPbF
HEXFETO Power MOSFET
Applications V R max I
0 High frequency DC-DC converters DSS DS(on) D
. Lead-Free 200V 0.1659 17A
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses 14it git
0 Fully Characterized Capacitance Including Ri'"" l R,5
Effective Coss to Simplify Design, (See I. f
App. Note AN1001)
q Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR15N20D |RFU15N20D
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current Ci) 68
PD @Tc = 25°C Power Dissipation 140
PD @TA = 25°C Power Dissipation' 3.0 W
Linear Derating Factor 0.96 W/°C
Vos Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 8.3 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .04
ROJA Junction-to-Ambient (PCB mount)* - 50 °CNV
ReJA Junction-to-Ambient - 110
Notes co through S are on page 10
1
1/17/05
IRFR/U15N20DPbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.26 - VI°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.165 Q VGS = 10V, ID = 10A 6)
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 200V, VGS = 0V
- - 250 Vros = 160V, Vss = 0V, To = 150°C
l Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 4.0 - - S l/ns = 50V, ID = 10A
Qg Total Gate Charge - 27 41 ID = 10A
Qgs Gate-to-Source Charge - 6.9 10 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 14 21 VGS = 10V, (D
tam) Turn-On Delay Time - 9.7 - VDD = 100V
tr Rise Time - 32 - ns ID = 10A
td(off) Turn-Off Delay Time - 17 - Rs = 6.89
tt Fall Time - 8.9 - l/ss = 10V ©
Ciss Input Capacitance - 910 - VGS = 0V
Coss Output Capacitance - 170 - Vos = 25V
Crss Reverse Transfer Capacitance - 31 - pF f = 1.0MHz
Coss Output Capacitance - 1380 - I/ss = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 67 - Ves = 0V, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 150 - VGS = 0V, Vos = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 260 mJ
IAR Avalanche CurrentCD - 10 A
EAR Repetitive Avalanche Energy© - 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 68 integral reverse G
(Body Diode) (D p-n junction diode. s
l/sn Diode Forward Voltage - - 1.5 V TJ = 25''C, ls = 10A, VGS = 0V (9
trr Reverse Recovery Time - 130 200 ns TJ = 25°C, IF = 10A
Q,, Reverse RecoveryCharge - 610 920 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
2
