IRFR12N25D ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters250V 0.26Ω 14ABenefits Low Gate- ..
IRFR130A ,N-CHANNEL POWER MOSFETIRFR/U130AAdvanced Power MOSFET
IRFR13N15D ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters150V 0.18Ω 14ABenefitsl Low Gate- ..
IRFR13N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.18Ω 14A Lead-FreeBenefits ..
IRFR13N20 ,Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)ApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
IRFR13N20D ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
ISL78214ARZ , 4A Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8012IRZ , 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator
IRFR12N25D-IRFU12N25D
250V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94296A
InternOfIQDO 1RFR12N25D
TOR Rectifier SMPS MOSFET IRFU12N25D
HEXFET© Power MOSFET
Applications
V R max I
. High frequency DC-DC converters DSS DS(on) D
250V 0.269 14A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses ti;iiji),r y''iijk,
o Fully Characterized Capacitance Including '"cl)ii'.eF's . J
Effective Coss to Simplify Design, (See ". " . '
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR12N25D IRFU12N25D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/cs @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.7 A
IDM Pulsed Drain Current C) 56
PD @Tc = 25°C Power Dissipation 144 W
Linear Derating Factor 0.96 W/°C
I/ss Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt S 9.3 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.04
ReJA Junction-to-Ambient (PCB mount)* - 50 °C/W
ReJA Junction-to-Ambient - 110
Notes C) through s are on page 10
1
09/21/01
IRFR12N25D/IRFU12N25D International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.29 - V/°C Reference to 25°C, ID = 1mA ©
Rosom Static Drain-to-Source On-Resistance - - 0.26 C2 VGS = 10V, ID = 8.4A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V VDs = I/ss, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA 1/ros = 200V, VGS = 0V
- - 250 VDs = 160V, Vss = 0V, To = 150°C
ks Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
ss Gate-to-Source Reverse Leakage - .- -100 VGS = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 6.8 - - S Vos = 25V, ID = 8.4A
% Total Gate Charge - 23 35 ID = 8.4A
Qgs Gate-to-Source Charge - 5.8 8.7 no Vos = 200V
di Gate-to-Drain ("Miller") Charge - 12 19 N/ss = 10V, (9
tdwn) Turn-On Delay Time - 9.1 - VDD = 125V
tr Rise Time - 25 - ns ID = 8.4A
tdott) Turn-Off Delay Time - 16 - Rs = 6.89
tr Fall Time - 9.2 - VGS = 10V ©
Ciss Input Capacitance - 810 - VGs = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 22 - pF f = 1.0MHz
Coss Output Capacitance - 1100 - Vss = 0V, VDS = 1.0V, f = 1.0MHz
Cass Output Capacitance - 50 - VGs = 0V, VDs = 200V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 130 - VGs = 0V, Vos = 0V to 200V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 250 ml
IAR Avalanche Current© - 8.4 A
EAR Repetitive Avalanche Energy© - 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 56 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 8.4A, VGS = 0V ©
tn Reverse Recovery Time - 140 - ns To = 25°C, IF = 8.4A
G, Reverse RecoveryCharge - 710 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
2
