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IRFR110IRN/a25200avai4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
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IRFR110-IRFU110-IRFU110PBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-9.524D
International
1:212 Rectifier IRFR11O
HEXFET® Power MOSFET llRFU1 1 O
6 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated -
0 Surface Mount(lfRFR110) VDSS - 100V
It Straight Lead (IRFU110)
0 Available in Tape & Reel ‘ r, RDS(on): 0.549
o FastSwitching
0 Ease of Paralleling
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
wave soldering techniques. The straight lead version (IRFU series) is for
on-resistance and cost-effectiveness. l -
The D-Pak is designed for surface mounting using vapor phase, infrared, or 'tii','',),) (ii''-:''),)
through-hole mounting applications. Power dissipation levels up to 1.5 watts _ t5N.
are possible in typical surface mount applications. D-PAK I-PAK
T0-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, VGs @ 10 V 4.3
In @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 2.7 A
IDM Pulsed Drain Current Ci) 17
Pro © Tc = 25°C Power Dissipation 25 W
Po @ TA = 25°C Power Dissipation (PCB Mount)" 2.5
Linear Derating Factor 0.20 W PC)
Linear Derating Factor (PCB Mount)" 0.020
Vas Gate-to-Source Voltage Ic20 V
EAS Single Pulse Avalanche Energy © 100 ml
IAR Avalanche Current (O 4.3 A
EAR Repetitive Avalanche Energy C) 2.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TU, TSTG Junction and Storage Temperature Range -55 to +150 D C
Soldering Temperature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case --. - 5.0
Ras Junction-to-Ambient (PCB mount)" - - 50 "C/IN
RNA Junction-to-Ambient - - 1 IO -
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRFR110,IRFU11O
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter 1 Min. Typ. Max. Units Test Conditions
V(Bmss Drain-to-Source Breakdown Voltage F 100 - - v Ver-OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient l - 0.13 - VPC Reference to 2500, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.54 f2 VGs=1OV, kr=2.6A ©
VGS(lh) Gate Threshold Voltage 2.0 - 1 4.0 v i Vos=Vss, b--.. 25011A
gfs Forward Transconductance 1.6 T - 1 - S 1Vos=50V, Io=2.6A ©
loss Drain-to-Source Leakage Current - _ 25 yA Vos=100V, VGS=OV
- - 250 VDs=80V, VGs=OV, TJ=125°C
les Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch Total Gate Charge - - 8.3 lo=5.6A
Qgs Gate-to-Source Charge - - 2.3 nC Vos=80V
di Gate-to-Drain ("Miller") Charge - - 3.8 Vas=10V See Fig. 6 and 13 (ip
td(on) Turn-On Delay Time - 6.9 - VDD=50V
tr Rise Time - 16 - ns ID=5.6A
tam) Turn-Off Delay Time - 15 - RG=24Q
tf Fall Time - 9.4 - RD=8.4Q See Figure 10 (9
Lo lnternai Drain Inductance - 4.5 - g (31% tie. , D
nH from package GEE
Ls Internal Source Inductance - 7.5 - and center df
die contact S
Gigs Input Capacitance - 180 - Ves=0V
Coss Output Capacitance - 80 - pF Vos=25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
is Continuous Source Current - - 4 3 MOSFET symbol D
(Body Diode) . A showing the fig
ISM Pulsed Source Current - - 17 integral reverse G Il
(Body Diode) G) p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, ls=4.3A, VGs=OV ©
tn Reverse Recovery Time - 100 200 ns TJ=25°C, IF=5.6A
er Reverse Recovery Charge - 0.44 0.88 pC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
OJ Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=8.1mH
RG=25§2, |As=4.3A (See Figure 12)
Cr) 15055.6A, di/dtsi75A/ws, VDDSV(BR)DSS,
TJS150°C
© Pulse width f. 300 ps; duty cycle s2%.
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