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IRFR1010ZIRN/a25200avaiAUTOMOTIVE MOSFET


IRFR1010Z ,AUTOMOTIVE MOSFETapplications.IRFR1010Z IRFU1010ZAbsolute Maximum RatingsParameter Max. Units(Silicon Limited)I @ T ..
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IRFR1010Z
AUTOMOTIVE MOSFET
PD - 96897
International
TOR. Rectifier AUTOMOTIVE MOSFET IFlFR1 01 OZ
IRFU1 01 OZ
Features
.Advanced Process Technology HEXFET® Power MOSFET
.UItra Low On-Resistance
.175°C Operating Temperature D
Fast Switchin VDSS = 55V
.Repetitive Avalanche Allowed up to ijax
G A RDS(on) = 7.5mQ
Description
Specifically designed for Automotive applications, s ID = 42A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating 14it 1(,it
temperature, fast switching speed and improved Ri' l, - V
repetitive avalanche rating . These features com- I.
bine to make this design an extremely efficient and
reliable device for use in Automotive applications D Pak I Pak
and a wide variety of other applications. IRFm010Z IRFU101OZ
Absolute Maximum Ratings
Parameter Max. Units
ID © TC = 25°C Continuous Drain Current, Vos © 10V (Silicon Limited) 91
ID @ TC = 100°C Continuous Drain Current, Ves © 10V 65 A
ID @ Tc = 25°C Continuous Drain Current, Vos © 10V (Package Limited) 42
IOM Pulsed Drain Current C) 360
PD @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.9 W/°C
VGS Gate-to-Source Voltage t 20 V
EASiThermaoyvmited) Single Pulse Avalanche Energy© 110 mJ
EAS (Tested) Single Pulse Avalanche Energy Tested Value © 220
|AR Avalanche Current OD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.8mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJc Junction-to-Case - 1.11
RNA Junction-to-Ambient (PCB mount) 0)© - 40 °CNV
RBJA Junction-to-Ambient - 110
HEXFET® is a registered trademark of International Rectifier.
1
9/29/04
IRFlR/Ly1ty10Z
International
IEER Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V I/as = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.051 - V/°C Reference to 25°C, ID = 1mA
Rrvson) Static Drain-to-Source On-Resistance - 5.8 7.5 mf2 Ves = 10V, ID = 42A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 100pA
gfs Forward Transconductance 31 - - S VDS = 25V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vss = 0V
- - 250 Vos = 55V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
a, Total Gate Charge - 63 95 ID = 42A
Qgs Gate-to-Source Charge - 17 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 23 - Vss = 10V ©
tdwn) Turn-On Delay Time - 17 - VDD = 28V
t, Rise Time - 76 - ID = 42A
Idiom Turn-Off Delay Time - 42 - ns Rs = 7.6 Q
t, Fall Time - 48 - l/ss = 10V ©
u, Internal Drain Inductance - 4.5 - Between lead, _ _ D
nH 6mm (0.25in.) ii/rr/ri-'),
Ls Internal Source Inductance - 7.5 - from package G' \/$/
and center of die contact s
Ciss Input Capacitance - 2840 - l/ss = 0V
Coss Output Capacitance - 470 - Vos = 25V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Coss Output Capacitance - 1630 - l/ss = 0V, l/ns = 1.0V, f = 1.0MHz
Coss Output Capacitance - 360 - Ves = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 560 - Vas = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol a
(Body Diode) A showing the L-,
ISM Pulsed Source Current - - 360 integral reverse G c,
(Body Diode) C) p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 42A, VGS = 0V ©
tr, Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 42A, VDD = 28V
Qrr Reverse Recovery Charge - 20 30 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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