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IRFPS40N60KIRN/a2000avai600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package


IRFPS40N60K ,600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagePD - 94384SMPS MOSFETIRFPS40N60K®HEXFET Power MOSFET
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IRFPS40N60K
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
PD - 94384
SMPS MOSFET IRFPS40N60K
HEXFET© Power MOSFET
RDS(on) typ. ID
0.110 0 40A
International
TOR Rectifier
Applications
Hard Switching Primary or PFC Switch
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
Benefits
. Low Gate Charge Qg results in Simple
Drive Requirement
. Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
o Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
i'r::,ii,ais_iir,
Fr... ". V .
SUPER TO-247AC
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, V65 @ 10V 40
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 24 A
IDM Pulsed Drain Current (D 160
PD @Tc = 25°C Power Dissipation 570 W
Linear Derating Factor 4.5 W/°C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °c
(1.6mm from case)
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 600 mJ
IAR Avalanche Current0) - 40 A
EAR Repetitive Avalanche Energy0) - 57 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.22
Recs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient - 40
1
01/30/02
IRFPS40N60K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.63 - Vl°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - 0.110 0.130 Q VGS = 10V, ID = 24A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = VGS, ID = 250pA
Koss Drain-to-Source Leakage Current _- _- 25500 pA x2: -] 328$ x: =- g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 I/cs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 21 - - S Vos = 50V, ID = 24A
% Total Gate Charge - - 330 ID = 38A
095 Gate-to-Source Charge - - 84 n0 Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 150 VGs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 47 - VDD = 300V
tr Rise Time - 110 - ns ID = 38A
td(off) Turn-Off Delay Time - 97 - Rs = 4.39
tf Fall Time - 60 - VGS = 10V,See Fig. 10 co
Ciss Input Capacitance - 7970 - VGS = 0V
Coss Output Capacitance - 750 - Vos = 25V
Crss Reverse Transfer Capacitance - 75 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 9440 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
CDSS Output Capacitance - 200 - VGS = 0V, Vros = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 260 - l/ss = 0V, Vos = 0V to 480V S
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 40 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) co p-n junction diode. s
N/so Diode Forward Voltage - - 1.5 V TJ = 25°C, IS = 38A, VGs = 0V ©
. - 630 950 To = 25°C IF = 38A
trr Reverse Recovery Time - 730 1090 ns To = 125°C di/dt = 100A/ps ©
Q" Reverse Recovery Charge - 14 20 PC To = 25''C
- 17 25 To = 125°C
IRRM Reverse Recovery Current - 39 58 A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L = 0.84mH, Rs = 259,
IAS = 38A, dv/dt =5.5V/ns (See Figure 12a)
© Isro S 38A, di/dt S 150A/ps, VDD S V(BR)ross,
TJs150°C
(4) Pulse width 3 300ps; duty cycle s: 2%.
s cus eff. is a fixed capacitance that gives the same charging time
as Coss while V05 is rising from 0 to 80% VDss

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