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IRFPS29N60LIRN/a1146avai600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package


IRFPS29N60L ,600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageFeatures and Benefits•          •    ..
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IRFPS29N60L
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
International
TOR Rectifier
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
Features and Benefits
diodes in ZVS applications.
Absolute Maximum Ratings
SMPS MOSFET
PD - 94622
RFPS29N60L
HEXFET@ Power MOSFET
RDS(on) typ.
Trr typ. ID
175mn 130ns 29A
SuperFast body diode eliminates the need for external
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
Super-247m
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, I/ss © 10V 29
b @ To = 100°C Continuous Drain Current, VGS © 10V 18 A
bs, Pulsed Drain Current (D 110
PD @Tc = 25°C Power Dissipation 480 W
Linear Derating Factor 3.8 W/°C
I/ss Gate-to-Source Voltage i30 V
dv/dt Peak Diode Recovery dv/dt © 12 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 1.1(10) tom (lbFin)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 29 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 110 integral reverse a :3;
(Body Diode) C) p-n junction diode. q
Vso Diode Forward Voltage - - 1.5 V To = 25°C, Is = 29A, VGS = 0V co
trr Reverse Recovery Time - 130 190 ns T J = 25°C, IF = 29A
- 240 360 To-- 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 630 950 nC To = 25°C, Is = 29A, VGS = 0V ©
- 1820 2720 To-- 125°C, di/dt = 100A/ps co
IRRM Reverse Recovery Current - 9.4 14 A T J = 25°C
ton Forward Tum-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
1
2/6/03
IRFPS29N60L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coefficient - 0.53 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 175 210 mf2 Vss = 10V, b = 17A (0
Vesnh) Gate Threshold Voltage 3.0 - 5.0 v Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 pA Ws = 600V, Vss = 0V
- - 2.0 mA Ws = 480V, I/ss = 0v, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Re Internal Gate Resistance - 0.86 - Q f= 1MHz, open drain
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 15 - - S Ws = 50V, ID = 17A
q, Total Gate Charge - - 220 ID = 29A
Qgs Gate-to-Source Charge - - 67 nC I/os = 480V
di Gate-to-Drain ("Miller") Charge - - 96 I/ss = 10V, See Fig. 7 & 15 C)
td(on) Turn-On Delay Time - 34 - VDD = 300V
t, Rise Time - 100 - ns b = 29A
tam) Turn-Off Delay Time - 66 - Rs = 4.39
t: Fall Time - 54 - VGS = 10V, See Fig. 11a &11b @
Ciss Input Capacitance - 6160 - VGS = ov
Coss Output Capacitance - 530 - Vos = 25V
Crss Reverse Transfer Capacitance - 44 - pF f = 1.0MHz, See Fig. 5
Coss eff. Effective Output Capacitance - 250 - Vss = 0V,VDS = 0V to 480V ©
Coss eff. (ER) Effective Output Capacitance - 190 -
(Energy Related)
Avalanche Characteristics
mbol Parameter
EAS ng se va
EAR rgy
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.26
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
RBJA Junction-to-Ambient - 40
Notes:
co Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle S 2%.
max. junction temperature. (See Fig. 11) (9 Coss eff. is a foted capacitance that gives the same charging time
© Starting TJ = 25°C, L = 1.5mH, Rs = 259, as Coss while Vos is rising from 0 to 80% Voss.
lAs = 29A. (See Figure 12a) Coss eff.(ER) is a fixed capacitance that stores the same energy
© Iso 3 29A, di/dt s 560Alps, V00 f V(BR)DSSv as Coss while Vos is rising from O to 80% Voss.
T J f 150°C.
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