IRFPG50PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
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Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
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IRFPG50-IRFPG50PBF
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International PD-9.543C
ISIZR Rectifier IRFPG50
HEXFET© Power MOSFET
0 Dynamic dv/dt Rating _
0 Repetitive Avalanche Rated D -
o Isolated Central Mounting Hole VDSS - 1OOOV
0 FastSwitching
o Ease of Paralleling FI- RDS(on) Crd 2.09
0 Simple Drive Requirements
s |D=6.1A
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
___.v_ -- ---- ___. '''_-''--'-'--'--'-''"'- -V_.v___.._ _V..fi_._ _ ' _ _ -- _ -- _ .‘
Pargrhgter
'0 @ Tc = 25°C QQrEiEUQHSRrEiD 921921, \_/<.3_s:@: 1333: f _i J] :1: iv: :1: :::____H
In @ Tc = 100°C Continuous Drain Current, Vas @ 10 V
IDM Pulsed Drain Current CTC)
PD © Tc = 25°C Power Dissipation
Linear Derating Factor
_rfesi, - e He, ,7.,, ,Ciaie;t9§9w9
EAs Single Pulse Avalanche Energy ©
IAR Avalanche Current ci) ___ - _______ _ _ ----_------------
EAR Repetitive AvalanchfAnyStfil, , ___ _ H_.__ - _ H5 - - -
<31ng -. “_I - _ - - f'tarD_ip_de Recovery dv/dt Ci) F
Tu Operating Junction and -55 to +150 I
TSTG Storage Temperate [133$ _ - - OC
Soldering Temperature, f_Q[_1_O__sec_ohgs_ _ - _ - £9999 .ftp_p_frtoSas_e) ___i__ _ _ H
Mounting Torque, 6-32 or M3 screw - IO lbhin (1.1 N-m) ( I
Thermal Resistance
__.,____,_ ___ - _ - __ -Piyiypistiy, _ - _ M 5 " h ,M” __4 _Typ.
_Fjggec___e___ Junction-to-Case - - - _ _
Recs fi1sistttyyA,fli1,t_ireyftri1rtyy, - - __ - _ 0-24 fl - l
-RssA_,_jtin,iitiVry,loldft.oitir1tr', _ ' ' _ _ - _ Lr--" =
10/29/97
IRFPG50
International
TOR Rectifier
Electrical Characteristics (g) TJ= 25°C (IIniess_ ;_1tr1trtf!trtsIeeit'!'td)
Test Conditions V . U _ 7
i Parameter Min: Typ.. _ Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100d - I - i) Veg;- 0V, iD=— 'yidrrr"
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.2 - V/°C Reference to 25°C, ID: 1mA
ftyjoo) Static Plain- to- Source On- Resistance - - 2.0 n VG5~1OV, ID=3.6A C4)
l/tsam) Gate Threshold Voltage 2f) - _ 4.0 . _ V Vostqs, i9: 25_0HA ---"
gis Forward Transconductance 5.4: - - - _ S__ VDs-1OOV ID=3_ fl, Cl
loss Drain-to-Source Leakage Current - - 100 HA VDSZmOOV Vas=0V
- - .1 - - 500 Vos=800V, Vos=OV, TJ=125°C
less Gate-to-Source Forward Leakage - g 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg - Total Gate Charge - - 190 |D=6.1A
Qgs Gate-to-Source Charge - - 23 n0 VDs=4OOV
di Gate-to-Drain ("Miller") Charge - - 110 Vss=10V See Fig. 6 and 13 GD
tam) Turn-On Delay Time - 19 - VDD=500V
tr Rise Time - 35 __ ns |D=6.1A
td(on) Turn-Off Delay Time - - - f _110 _ Ho=6.2n
tf Fall Time _ b.-- V 36 - Ro--81n See Figure 10 I,
lu, Internal Drain Inductance - 5.0 -.r-r. [e',t,v,1(rjf.iti1/,i.')
- nH from package
Ls Internal Source Inductance - 13 m and center of
die contact
Iiiss Inpyt Capacitangg - 2800 - VG8=OV
Coss Output Capacitance --. 250 - PF V03: 25V
Cas Reverse Transfer Capacitance .. - __,_..8._4. =, - f l OMHZ 1efigye,
Source-Drain Ratings and Characteristics
- Parameter Min, Typ. Max. Units Test Conditions
ls Continuous Sourc'e Current - _ 6 1 MOSFET symbol \D
_(Body Diode) . A showing the :7:
ISM Pulsed Source Current - - 24 integral reverse :1;
__W___ - _(lijppyprode) ©___ p-n junction diode. . s
I/so Diode Forward Voltage - _____+ - - 1.8 V TJ=25°C, Is=671A, Ves=OV CI)
km - ' Reverse Recovery Timé - 630 950 ns TJ=25°C, IF=6.1A
Q" Reverse Recpvery Charge .-_- 3.5 5.3 IIC di/dt=100A/pts ©
ton Forward Turn- On Time Intrinsic turn-on time is negiegible (turn-on is dominated by Ls+Uo),
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) VDD=5ov, starting TJ=2500, L=40mH
Re=259, iAs=6.1A (See Figure 12)
C3) isoSBJA, di/de120A/ws, VDDSGOO ,
TJSi 50°C
c2 Pulse width I 300 pa; duty cycle c2%.
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