IRFPE40PBF ,800V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
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IRFPE40 -IRFPE40PBF
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
Tl!l)R Rectifier
PD-9.57BB
IRFPE40
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Isolated Central Mounting Hole
o Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Voss = 800V
A RDS(on) = 2.0Q
S b---5.4A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max. Units
in @ Tc = 25°C Continuous Drain Current, VGs @ 10 V 5.4
In @ To = 100°C Continuous Drain Current, Ves © 10 V 3.4 A
IDM Pulsed Drain Current co 22
PD @ To = 25°C EPower Dissipation 150 w
Linear Derating Factor 1.2 WPC
Vas Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy f2) 490 __mJ
IAR Avalanche Current 0) 5.4 A
EAR sf.rtE_tatitive Avalanche Energy C) 15 ml
dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
TJ Operating Junction and -55 to +150
Tsrs Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. 2 Typ. Max. Units
Ran: Junction-to-Case -.. - 0.83
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
ROJA Junction-to-Ambient - - 40
lRFPE40
Electrical Characteristics (ii) TJ = 25°C (unless otherwise specified)
:rithit
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 800 - - V VGS=0V, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.98 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 2.0 Q Ves=10V, |D=3.2A CI)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID: 2500A
Ps Forward Transconductance 3.0 - - S Vos=100V, |D=3.2A ©
loss Drain-to-Source Leakage Current - - 100 pA VDs=800V, I/ss-UN
- - 500 VDs=64OV, Vas-HN, TJ=125OC
less Gate-to-Source Forward Leakage - - 100 n A VGS=2OV
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
09 Total Gate Charge - - 130 lo=5.4A
Qgs Gate-to-Source Charge - - 17 I VDs=4OOV
di Gate-to-Drain ("Miller") Charge - - 72 Vss---10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 16 - VDD=4OOV
tr Rise Time - 36 - ns 10:5.4A
tam) Turn-Off Delay Time ._. 100 - Rs=9.1Q
t, Fall Time - 32 - RD=7SQ See Figure 10 (if)
Lo Internal Drain Inductance - 5.0 - t'htir1ton.stiand.') D
nH from package GE )
Ls Internal Source Inductance - 13 - Ind center df
die contact s
Ciss Input Capacitance - 1900 - Vss--0V
Coss Output Capacitance - 470 - pF Vos=25V
Crss Reverse Transfer Capacitance - 280 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 5 4 MOSFET symbol D
(Body Diode) . A showing the L,t
ISM Pulsed Source Current - - 22 integral reverse G tr)
(Body Diode) C) p-n junction diode. S
Van Diode Forward Voltage - - 1.8 V TJ=2500, Is=5.4A, Vss=OV co
trr Reverse Recovery Time - 550 830 ns TJ=25°C, IF=5.4A
Orr Reverse Recovery Charge - 2.4 3.6 wc di/dt=100A/us C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=31mH
RG--25Q, |As=5.4A (See Figure 12)
LO ISDSSAA, di/dts120A/ws, VDDSGOO ,
TJS150°C
© Pulse width 3 300 ps; duty cycle 32%.
