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IRFP4710-IRFP4710PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
PD - 94361
IRFP4710
HEXFET® Power MOSFET
App-llcatlons Voss RDS(on) max ID
. High frequency DC-DC converters
. Motor Control 100V 0.0149 72A
o Uninterruptible Power Supplies
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001) TO-247AC
o Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 72
ID @ To = 100°C Continuous Drain Current, l/cs @ 10V 51 A
IDM Pulsed Drain Current (D 300
Po @Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.2 W/°C
I/ss Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt © 8.2 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.81
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °CNV
ReJA Junction-to-Ambient - 40
Notes C) through © are on page 8
1
01/08/02
IRFP4710 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, lo = 250pA
AV
Rosmn) Static Drain-to-Source On-Resistance - 0.011 0.014 n VGs = 10V, ID = 45A ©
Vesuh) Gate Threshold Voltage 3.5 - 5.5 V Vos = I/cs, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 95V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 35 - - S Vros = 50V, ID = 45A
% Total Gate Charge - 110 170 ID = 45A
Qgs Gate-to-Source Charge - 43 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 40 - VGS = 10V,
tmn) Turn-On Delay Time - 35 - VOD = 50V
t, Rise Time - 130 - ns ID = 45A
tam) Turn-Off Delay Time - 41 - Rs = 4.59
tf Fall Time - 38 - VGs = 10V ©
Ciss Input Capacitance - 6160 - VGs = 0V
Cass Output Capacitance - 440 - Vos = 25V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Coss Output Capacitance - 1580 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 280 - VGS = 0V, Vros = 80V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 430 - VGs = 0V, I/rss = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 190 m1
IAR Avalanche Current© - 45 A
EAR Repetitive Avalanche Energy© - 20 m]
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 72 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 300 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 45A, VGS = 0V 69
trr Reverse Recovery Time - 74 110 ns Tu = 25°C, IF = 45A
Qrr Reverse RecoveryCharge - 180 260 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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