IRFP440 ,8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFETInternational
EOR Rectifier
PD-9.457C
IFIFP440
HEXFET® Power MOSFET
Description
D ..
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IRFP440
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
ntet'tpatiii.titt,tal
EOR Rectifier
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PD-9.457C
|RFP44O
D I/ross r= 500V
r, RDS(on) = 0.859
s ID Tr. 8.8A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max, Units
lo a Tc = 25°C Continuous Drain Current, Vas @ 10 V 8.8
In @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 5.6 A
IDM Pulsed Drain Current (i) 35
Po @ To = 25°C Power Dissipation 150 W
Linear Derating Factor 1.2 WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy (2) 480 md
IAR Avalanche Current s 8.8 A
EAR Repetitive Avalanche Energy co 15 md
dv/dt Peak Diode Recovery dv/dt G) 3.5 V/ns
To Operating Junction and -55 to +150
Tsrs Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1 A N.m) _
Thermal Resistance
Parameter Min. Typ. Max. oTits
Rat: Junction-to-Case - - 0.83 -
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
Ram Junction-to-Ambient - - 4O
IRFP440
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs=0V, ID: 250PA
AV(BF{)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.78 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.85 Q VGs=10V, lo=5.3A (P
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250PA
gfs Forward Transconductance 5.3 - - S Vos=50V, 10:5.3A Co)
loss Drain-to-Source Leakage Current - - 25 pA Vns=500V, VGS=0V
- - 250 VDS=4OOV, VGs=OV. TJ=12500
less Gate-to-Source Forward Leakage - - 100 n A Vss--20V
Gate-to-Source Reverse Leakage - - -1OO Vss=-20V
ch, Total Gate Charge - - 63 b=8.0A
Qgs Gate-to-Source Charge - - 11 " Vos=400V
di Gate-to-Drain ("Miller") Charge - - 30 Vss---10V See Fig. 6 and 13 C43
tam) Turn-On Delay Time - 14 - VDD=250V
tr Rise Time - 23 - ns b=8.OA
tam") Turn-Off Delay Time - 49 - Re=9.1§2
tf Fall Time - 20 - RD=31Q See Figure 10 (4)
Lo Internal Drain Inductance - 5.0 - tt,1vri'l./gifi',') D
nH from package iii-ii
Ls Internal Source Inductance - 13 --- Ind center Of
die contact s
Ciss Input Capacitance - 1300 -. Vss=OV
Coss Output Capacitance - 310 - pF Vos--. 251/
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 8 8 MOSFET symbol ry
(Body Diode) . A showing the L,-,-':
ISM Pulsed Source Current - - as integral reverse G :L
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=2500, Is=8.8A, I/cs-HN Ci)
tn Reverse Recovery Time -- 460 970 ns TJ=25°C, |F=8.0A
er Reverse Recovery Charge - 3.5 7.6 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+ruo),
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=11mH
Re=259, IAs=8.8A (See Figure 12)
O ISDSB.8A, di/dts1OOA/ps, VDDSV(BR)DSS,
TJS150°C
Cii) Pulse width f 300 ps; duty cycle 32%.
