IRFP4242 ,PDP Switch 300V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JConditionsParameter Min. Typ. Ma ..
IRFP4242PBF ,PDP MOSFETElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRFP4310Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4321PBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4368PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP440 ,8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFETInternational
EOR Rectifier
PD-9.457C
IFIFP440
HEXFET® Power MOSFET
Description
D ..
ISL6596CRZ , Synchronous Rectified MOSFET Driver
ISL6596IRZ , Synchronous Rectified MOSFET Driver
ISL6605CB ,Synchronous Rectified MOSFET DriverISL6605®Data Sheet August 2003 FN9091.2Synchronous Rectified MOSFET Driver
ISL6605CB-T ,Synchronous Rectified MOSFET Driverapplications. • Enable InputEach driver is capable of driving a 3000pF load with a 8ns propagation ..
ISL6605CR ,Synchronous Rectified MOSFET DriverFeatures• Drives Two N-Channel MOSFETsThe ISL6605 is a high frequency, MOSFET driver optimized to d ..
ISL6605CR ,Synchronous Rectified MOSFET Driverapplications. • Enable InputEach driver is capable of driving a 3000pF load with a 8ns propagation ..
IRFP4242
PDP Switch 300V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 96966B
International
ISBR Rectifier PDP MOSFET llRFP4242PbF
Features
. Advanced process technology . Key Parameters
. Key parameters optimized for PDP Sustain & VDS min 300 V
Energy Recovery applications l/os (Avalanche) typ. 360 V
. Low EPULSE rating to reduce the power R t @ 10V m9
dissipation in Sustain & ER applications WON) yp. O 49
q Low Qs for fast response lm, max @ TC: 100 C 93 A
. High repetitive peak current capability for Tu max 175 °C
reliable operation
. Short fall & rise times for fast switching D D "ilr,t,,
.175°C operating junction temperature for ‘Lgy’;
improved ruggedness _ F _
. Repetitive avalanche capability for robustness G ‘ " . os
and reliability G
S T0-247AC
Description G ate D rain Sou rce
This HEXFETQ Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vas Gate-to-Source Voltage t30 V
ID @ TC = 25°C Continuous Drain Current, Vas @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, Vas @ 10V 33
G, Pulsed Drain Current co 190
lm, © TC = 100°C Repetitive Peak Current s 93
PD @Tc = 25°C Power Dissipation 430 W
PD @TC = 100°C Power Dissipation 210
Linear Derating Factor 2.9 W/°C
T, Operating Junction and -40 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case (ii) - 0.35 °CNV
Notes (D through © are on page 8
1
09/14/07
lRFP4242PbF
International
TO.R Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 300 - - V Vss = 0V, ID = 250uA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 220 - mV/°C Reference to 25°C, '0 = 1mA
Roam) Static Drain-to-Source On-Resistance - 49 59 m9 Vas = lov, l. = 33A ©
V6501.) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vas, ID = 250PA
AVGSW/ATJ Gate Threshold Voltage Coefficient - -15 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 PA Vos = 240V, Vss = 0V
- _ 150 Vos = 240V, Vas = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Wis = -20V
gts Forward Transconductance 78 - - S Vos = 25V, ID = 33A
q, Total Gate Charge - 165 247 nC Von = 150V, ID = 33A, Vas = 10V©
di Gate-to-Drain Charge - 61 -
two") Turn-On Delay Time - 40 - Va, = 150V, Ves = 10V ©
t, Rise Time - 71 - ns Ir) = 33A
ton Turn-Off Delay Time - 72 - Rs = 5.09
t, Fall Time - 48 - See Fig. 22
It Shoot Through Blocking Time 100 - - ns VDD = 240V, Ves = 15V, Rs-- 5.19
L = 220nH, C= 0.4pF, Vas =15V
EPULSE Energy per Pulse - 1960 - pJ Vos = 240V, Ra-- 4.79, T, = 25°C
L = 220nH, C= 0.4pF, Vss =15V
- 3740 -
Vos = 240V, Ra-- 4.79, T, = 100°C
Ciss Input Capacitance - 7370 - Vss = 0V
Cass Output Capacitance - 520 - pF Vos = 25V
cu, Reverse Transfer Capacitance - 220 - f = 1.0MHz, See Fig.9
Coss eff. Effective Output Capacitance - 320 - Vas = 0V, Vos = 0V to 240V
LD Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25in.) iii))
Ls Internal Source Inductance - 13 - from package GALJ
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 700 md
EAR Repetitive Avalanche Energy C) - 43 mJ
Vos(Avtganche) Repetitive Avalanche Voltage C) 360 - V
lAs Avalanche Current C) - 33 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls © Tc = 25°C Continuous Source Current - - 46 MOSFET symbol a
(Body Diode) A showing the _,
ISM Pulsed Source Current - - 190 integral reverse Cl Elk
(Body Diode) C) p-n junction diode. c
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 33A, Vas = 0V Cl)
trr Reverse Recovery Time - 300 450 ns Tu = 25°C, IF = 33A, Va, = 50V
a,, Reverse Recovery Charge - 2330 3500 nC di/dt = 1OOA/ps ©
2
