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IRFP4227IRN/a1avaiPlasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package.
IRFP4227PBFIRN/a130avaiPlasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package.


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IRFP4227-IRFP4227PBF
Plasma Display Panel Switch 200V Discrete HEXFET Power MOSFET in a Lead-Free TO-247AC Package.
. PD - 97070A
International
Tart Rectifier PDP SWITCH llRFP4227PbF
Features
. Advanced Process Technology Key Parameters
q Key Parameters Optimized for PDP Sustain, l/os max 200 V
Energy Recovery and Pass Switch Applications VDs (Avaanche)typ. 240 V
o L.OW.EPL.JLSE. Rating to Reduce Power RDS(ON) typ. @ 10V 21 mg
Dissipation In PDP Sustain, Energy Recovery o
and Pass Switch Applications lm, max @ TC: 100 C 130 A
. Low QG for Fast Response Tu max 175 °C
. High Repetitive Peak Current Capability for
Reliable Operation D D l
. Short Fall & Rise Times for Fast Switching (,ri,',iisca,isiit
.175°C Operating Junction Temperature for 7 f T
Improved Ruggedness G "l " _ os
q Repetitive Avalanche Capability for Robustness G
and Reliability s TO 247AC
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage t30 V
|D © TC = 25°C Continuous Drain Current, Vss @ 10V 65 A
lr, © TC = 100°C Continuous Drain Current, Vss @ 10V 46
G, Pulsed Drain Current (D 260
lm, @ TC = 100°C Repetitive Peak Current s 130
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190
Linear Derating Factor 2.2 W/°C
TJ Operating Junction and -40 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10Ib-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Flax, Junction-to-Case Ci) - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
RGJA Junction-to-Ambient Ci) - 62
Notes C) through © are on page 8
1
09/14/07

lRFP4227PbF
International
TOR Rectifier
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 170 - mV/°C Reference to 25°C, Ir) = 1mA
RDs(on) Static Drain-to-Source On-Resistance 21 25 m9 Vss = lov, ID = 46A (3)
l/asm Gate Threshold Voltage 3.0 - 5.0 V I/rss = Vas, ID = 250PA
AI/asm/AT, Gate Threshold Voltage Coefficient - -13 - mV/°C
loss Drain-to-Source Leakage Current - - 20 HA Vos = 200V, Ves = 0V
- _ 1.0 mA Vos = 200v, I/ss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vai; = 20V
Gate-to-Source Reverse Leakage - - -100 Wis = -20V
gfs Forward Transconductance 49 - - S Vos = 25V, '0 = 46A
q, Total Gate Charge - 70 98 n0 Von = 100V, '0 = 46A, Ves = 10V©
di Gate-to-Drain Charge - 23 -
Ion) Turn-On Delay Time - 33 - Von = 100V, Vas = 10V ©
t, Rise Time - 20 - ns h; = 46A
taott) Turn-Off Delay Time - 21 - Rs = 2.59
ti Fall Time - 31 - See Fig. 22
tst Shoot Through Blocking Time 100 - - ns VDD = 160V, Vss = 15V, Rs-- 4.79
L = 220nH, C= 0.4pF, Vss =15V
EPULSE Energy per Pulse - 570 - pJ Vos = 160V, Rs-- 4.79, TJ = 25°C
- 910 _ L = 220nH, C= 0.4pF, Vas =15V
Vros = 160V, Re: 4.79, TJ = 100°C
Ciss Input Capacitance - 4600 - Vos = 0V
Cass Output Capacitance - 460 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 91 - f = 1.0MHz,
Cass eff. Effective Output Capacitance - 360 - Vas = 0V, Vos = 0V to 160V
Lo Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25in.) (ir-," "
Ls Internal Source Inductance - 13 - from package 6&4 /'
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
EAR Repetitive Avalanche Energy OD - 33 mJ
VDS(Ava.anche) Repetitive Avalanche Voltage C) 240 - V
|As Avalanche Current © - 39 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls © Tc = 25°C Continuous Source Current - - 65 MOSFET symbol a
(Body Diode) A showing the _
lu, Pulsed Source Current - - 260 integral reverse Ch Elk
(Body Diode) OD p-n junction diode. fl
VSD Diode Forward Voltage - - 1.3 V Tu = 2YC, ls = 46A, Vas = 0V O)
trr Reverse Recovery Time - 100 150 ns Tu = 25°C, IF = 46A, Va, = 50V
Q,, Reverse Recovery Charge - 430 640 nC di/dt = 100A/ps ©
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