IRFP360PBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
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EOR Rectifier
HEXFET® Power MOSFET
PD-9.5688
IRFP360
Dynamic dv/dt Ra ..
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IRFP360-IRFP360PBF
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-9.5688
|RFP36O
llrttettatiip,)t,tal
EOR Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
o Repetitive Avalanche Rated D -
o Isolated Central Mounting Hole VDSS - 400V
o FastSwitching
0 Ease of Paralleling G RDS(on) =. 0.20Q
o Simple Drive Requirements
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
E: :[3
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Vas @ 10 V 23
lo @ To = 100°C Continuous Drain Current, Ves @ 10 V 14 A
(OM Pulsed Drain Current OD 92
Po @ Tc = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 WPC
Vss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Cl) 1200 m
tAn Avalanche Current Ci) 23 A
EAR Repetitive Avalanche Energy co 28 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns -
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range DC
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-tMSO - - 0.45
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
Rm Junction-to-Ambient - - 40
llRFP360
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 400 - - V Veszov, ID: 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.56 - V/°C Reference to 25°C, ID: 1mA
Ros(on) Static Drain-to-Source On-Resistance - - 0.20 Q VGs=10V, b=14A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Voszves, Io: 250pA
gis Forward Transconductance 14 - - S Vos=50V, ID=14A GD
1033 Drain-to-Source Leakage Current -..r- - 25 pA Vrrs=400V, VGS=OV
- - 250 Vos=32OV, Vos-HN, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Ch Total Gate Charge - - 210 b=23A
Qgs Gate-to-Source Charge - - 30 nC Vos=320V
di Gate-to-Drain ("Miller") Charge - - 110 VGs--10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 18 - VDD=200V
tr Rise Time - 79 - ns b--23A
td(off) Turn-Off Delay Time - 100 - FIG---4.3n
tr Fall Time - 67 - RD=B.3Q See Figure 10 G)
Lo Internal Drain Inductance -... 5.0 - 2t"(iltifi.') D
nH _ from package Gfig
Ls Internal Source Inductance - 13 - i and center 6f I
V die contact s
Ciss Input Capacitance - 4500 - _ VGs=OV
Coss Output Capacitance - 1100 - pF I V03: 25V
Crss Reverse Transfer Capacitance - 490 - ' f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 23 MOSFET symbol D
(Body Diode) A showing the Cr,-,
ISM Pulsed Source Current - - 92 integral reverse (3 CL
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=23A, 1/ar=0V ©
in Reverse Recovery Time - 420 630 ns TJ=25°C, IF--23A
er Reverse Recovery Charge - 5.6 8.4 ld di/dt=100A/ws ©
tan Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=4.0mH
Rs=25f2, |As=23A (See Figure 12)
TJS150°C
Q) ISDSZSA, di/de170/Ws, Vroo
(ii) Pulse width s: 300 ps; duty cycle s2%.
