IRFP32N50K ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageApplications Switch Mode Power Supply (SMPS)V R typ. IDSS DS(on) D Uninterruptible Power Supply ..
IRFP32N50KPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD - 94099AIRFP32N50KSMPS MOSFET®HEXFET Power MOSFET
IRFP340PBF , HEXFET Power MOSFET
IRFP3415 ,150V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but ..
IRFP344 ,450V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
IRFP344PBF , HEXFET Power MOSFET
ISL6566CRZ-TR5184 , Three-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
ISL6567IRZ , Multipurpose Two-Phase Buck PWM Controller with Integrated MOSFET Drivers
ISL6568 ,Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applicationsfeatures provide advanced protection for the microprocessor and power system.January 12, 2012 Hand ..
ISL6568 ,Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applicationsfeatures of this controller IC include - Uses Loss-Less r Current SamplingDS(ON) programmable VID c ..
ISL6568CR , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
ISL6568CRZ-T , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
IRFP32N50K -IRFP32N50KPBF
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
:raRIectifier
Applications
PD - 94099A
IRFP32N50K
SMPS MOSFET
. Switch Mode Power Supply (SMPS)
HEXFET© Power MOSFET
o Uninterruptible Power Supply Voss RDS(0n)typ' ID
0 High Speed Power Switching 500V 0.1359 32A
o Hard Switched and High Frequency
Circuits
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
o Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current TO-247AC
. Low RDS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 32
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 20 A
G, Pulsed Drain Current C) 130
Pro @Tc = 25°C Power Dissipation 460 W
Linear Derating Factor 3.7 W/''C
VGS Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 "C
(1.6mm from case )
Mounting torque, 6-32 or M3 screw 10lb*in (1 .1N*m)
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 450 mJ
IAR Avalanche Current© - 32 A
EAR Repetitive Avalanche Energy© - 46 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.26
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
ReJA Junction-to-Ambient - 40
1
05/24/01
IRFP32N50K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units) Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, lo = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.54 - V/°C Reference to 25°C, lo = 1mA©
Roswn) Static Drain-to-Source On-Resistance - 0.135 0.16 n VGS = 10V, ID = 32A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V I/rss = Was, ID = 250pA
loss Drain-to-Source Leakage Current - _ 22% :2 $3: = 288$ V: = g, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ T J = 25°C (unless otherwise s ecified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 14 - - S I/rss = 50V, ID = 32A
09 Total Gate Charge - - 190 ID = 32A
095 Gate-to-Source Charge - - 59 nC I/os = 400V
di Gate-to-Drain ("Miller") Charge - - 84 VGS = 10V Ci)
tam) Turn-On Delay Time - 28 - VDD = 250V
tr Rise Time - 120 - ns ID = 32A
td(off) Turn-Off Delay Time - 48 - Rs = 4.39
tf Fall Time - 54 - I/ss = 10V Cr)
Ciss Input Capacitance - 5280 - I/ss = 0V
Coss Output Capacitance - 550 - Vos = 25V
Crss Reverse Transfer Capacitance - 45 - pF f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 5630 - Ves = 0V, Ws = 1.0V, f = 1.0MHz
Coss Output Capacitance - 155 - Vss = 0V, Ws = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 265 - I/ss = 0V, VDs = 0V to 400V ©
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 32 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 130 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, Is = 32A, VGS = 0V ©
trr Reverse Recovery Time - 530 800 ns To = 25°C, IF = 32A
Qrr Reverse RecoveryCharge - 9.0 13.5 pC di/dt = 100A/ps ©
IRRM Reverse RecoveryCurrent - 30 - A
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by G) Pulse width 3 400ps; duty cycle s: 2%.
max. junction temperature.
© Starting T
IAS = 32A
© Isro s 32A,
J = 25°C, L = 0.87mH, Rs = 259,
di/dt S 197A/ps, VDD S V(BRpss,
TJs150°C
6) Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
