IRFP250NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational PD-9.444C
TOR Rectifier IRFP240
HEXFETOD Power MOSFET
q Dynamic dv/dt Rating
..
IRFP250PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.443D
International
EOR Rectifier IRFP250
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating ..
IRFP250PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.443D
International
EOR Rectifier IRFP250
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating ..
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IRFP240PBF-IRFP250NPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
149R Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
q Isolated Central Mounting Hole
0 FastSwitching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.444C
IRFP240
D VDSS = 200v
r, RDS(on) = 0.18n
s ID = 20A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications .
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Ves © 10 V 20
ID © To = 100°C Continuous Drain Current, VGs @ 10 V 12 A
IDM Pulsed Drain Current co 80
Pro @ To = 25°C Power Dissipation 150 W
Linear Derating Factor 1.2 WPC-
Vas Gate-to-Source Voltage :20 V -
EAS Single Pulse Avalanche Energy C) 510 md
IAR Avalanche Current CD 20 A
EAR Repetitive Avalanche Energy (f) 15 -rl,
dv/dt Peak Diode Recovery dv/dt © 5.0 _ V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 tbfoin (1.1 Nam) J
Thermal Resistance
fig Parameter Min. Typ. Max. Units
-hTw] Junction-to-Case - - 0.83
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
RBJA Junction-to-Ambient - - 40 J
lRFP240 EOR
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(amoss Drain-to-Source Breakdown Voltage 200 - - V VGs=0V, ID: 25OWA
AV(an)oss/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - VPC Reference to 25'C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.18 Q VG3=10V, ID=12A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 2500A
gfs Forward Transconductance 6.9 - - S Vns=50V, |D=12A ©
loss Drain-to-Source Leakage Current - - 25 WA Vrys--200V, VGs=OV
- - 250 Vos=160V, Ves=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch; Total Gate Charge - - 7O ID=18A
Qgs Gate-to-Source Charge - - 13 " VDS=1eov
di Gate-to-Drain ("Miller") Charge -.- - 39 VGs=10V See Fig. 6 and 13 (g)
td(on) Turn-On Delay Time - 14 - Vnn=100V
t, Rise Time - 51 - ns lro=18A
tum) Turn-Off Delay Time - 45 - j Re=9.1Q
t Fall Time - 36 - I Ro=5.4Q See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - tt2tti.liti)f.') D
nH from package 6Q:
Ls Internal Source Inductance - 13 - Ind center df
die contact s
Gigs Input Capacitance - 1300 - Ves=ov
Coss Output Capacitance - 400 - pF V03: 25V
Crag Reverse Transfer Capacitance - 130 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 20 MOSFET symbol D
(Body Diode) A showing the Hi:
ISM Pulsed Source Current - - 80 integral reverse G Io-u,
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - 2.0 V TJ=2500, Is=20A, VGS=OV (4)
trt Reverse Recovery Time - 300 610 ns TJ=2SOC, lr=18A
G, Reverse Recovery Charge - 3.4 7.1 pC di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
© Voo=5ov, starting TJ=25°C, L=1.9mH
RG=25§2, |AS=20A (See Figure 12)
co Isos18A, di/de150A/I1s,NrorosVpR)Dss,
TJSA 50°C
(4) Pulse width f 300 ps; duty cycle 32%.
