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IRFP22N60K-IRFP22N60KPBF
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 94414
TOR Rectifier SNIPS MOSFET
HEXFET© Power MOSFET
Applications V R t I
. Hard Switching Primary or PFS Switch DSS DS(on) yp. D
o Switch Mode Power Supply (SMPS) 600V 240mg 22A
0 Uninterruptible Power Supply
. High Speed Power Switching
q Motor Drive
Benefits
o Low Gate Charge 09 results in Simple Drive Requirement
o Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
o Fully Characterized Capacitance and Avalanche Voltage and
Current
o Enhanced Body Diode dv/dt Capability
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, N/ss @ 10V 22
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 14 A
IDM Pulsed Drain Current co 88
Pro @Tc = 25°C Power Dissipation 370 W
Linear Derating Factor 2.9 W/°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 15 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °c
(1.6mm from case )
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 380 mJ
IAR Avalanche CurrentCD - 22 A
EAR Repetitive Avalanche Energy© - 37 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rsuc Junction-to-Case - 0.34
Recs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient - 40
1
4/2/02
IRFP22N60K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.30 - V/°C Reference to 25°C, ID = 1mA©
Roswn) Static Drain-to-Source On-Resistance - 240 280 mn VGS = 10V, ID = 13A G)
Vegan) Gate Threshold Voltage 3.0 - 5.0 V I/rss = Was, ID = 250pA
bss Drain-to-Source Leakage Current _ - 25500 [t x2: = 323$ x: = g, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 30V
Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 - - S l/DS = 50V, Io = 13A
% Total Gate Charge - - 150 ID = 22A
Qgs Gate-to-Source Charge - - 45 nC Ws = 480V
di Gate-to-Drain ("Miller") Charge - - 76 VGS = 10V ©
tum) Turn-On Delay Time - 26 - VDD = 300V
tr Rise Time - 99 - ns ID = 22A
td(off) Turn-Off Delay Time - 48 - RG = 6.2 Q
" Fall Time - 37 - VGS = 101/ ©
Ciss Input Capacitance - 3570 - VGS = 0V
Cos,S Output Capacitance - 350 - Vros = 25V
Crss Reverse Transfer Capacitance - 36 - pF f = 1.0MHz
Coss Output Capacitance - 4710 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 92 - VGS = 0V, Vos = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 180 - VGs = 0V, Vos = 0V to 480V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 22 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 88 integral reverse G
(Body Diode) (D p-n function diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 22A, VGS = 0V 6)
. - 590 890 To = 25°C IF = 22A
trr Reverse Recovery Time - 670 1010 ns TJ = 125°C di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 7.2 11 pC TJ = 25°C
- 8.5 13 TJ = 125°C
IRRM Reverse Recovery Current - 26 39 A To = 25°C
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle s: 2%.
max. junction temperature.
C) Starting TJ = 25°C, L = 1.5mH, RG = 259,
IAS = 22A
© ISD S 22A,
di/dt S 360 Alps, VDD S V(BR)DSSI
TJ 3 150°C.
S Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDs is rising from 0 to 80% Voss .
