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IRFP22N50A |IRFP22N50AIR N/a7765avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP22N50APBFVISHAYN/a27796avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP22N50A. |IRFP22N50AIRN/a75avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP22N50A -IRFP22N50A.-IRFP22N50APBF
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
Applications
SMPS MOSFET
PD- 91833C
IRFP22N50A
HEXFET© Power MOSFET
0 Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID
0 Uninterruptlble Power Supply 500V 0.239 22A
0 High Speed Power Switching
Benefits ,
q Low Gate Charge Clg results in Simple j" ,',,i,,i'siti.t,
Drive Requirement 'kiii''isi'r'
q Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V 22
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 14 A
G, Pulsed Drain Current C) 88
Pro @Tc = 25°C Power Dissipation 277 W
Linear Derating Factor 2.2 W/“C
VGS Gate-to-Source Voltage l 30 V
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10Ibf-in (1.1N-m)
Typical SMPS Topologies
q Full Bridge Converters
0 Power Factor Correction Boost
Notes (O through (9 are on page 8
1
12/15/99
IRFP22N50A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 500 - - V Vss = 0V, ID = 250pA
AVRoswn) Static Drain-to-Source On-Resistance - - 0.23 n VGS = 10V, ID = 13A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current _- _- Ji, HA x3: , iggx x2: =- 3x To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 12 - - S Vros = 50V, ID = 13A
% Total Gate Charge - - 120 ID = 22A
ths Gate-to-Source Charge - - 32 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 52 V65 = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 26 - VDD = 250V
tr Rise Time - 94 - ns ID = 22A
tum) Turn-Off Delay Time - 47 - Rs = 4.39
tf Fall Time - 47 - RD = 11Q,See Fig. 10 ©
Ciss Input Capacitance - 3450 - I/ss = 0V
Coss Output Capacitance - 513 -_- VDS = 25V
Crss Reverse Transfer Capacitance - 27 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 4935 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
COSS Output Capacitance - 137 - Vss = 0V, Ws = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 264 - Vss = 0V, Vros = 0V to 400V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1180 mJ
IAR Avalanche Current© - 22 A
EAR Repetitive Avalanche Energy0) - 28 ml
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.45
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 22 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 88 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 22A, VGS = 0V ©
tn Reverse Recovery Time - 570 850 ns To = 25''C, IF = 22A
Qrr Reverse RecoveryCharge - 6.1 9.2 pC di/dt = 100/Ups Cr)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
2
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