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IRFP17N50LVISHAYN/a49avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP17N50L哈里斯N/a49avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP17N50LIRN/a475avai500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP17N50L
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
:raRIectifier
Applications
PD - 94322A
IRFP17N50L
SMPS MOSFET
Zero Voltage Switching SMPS
HEXFET@ Power MOSFET
. Telecom and Server Power Supplies VDSS Rnsion) typ. Trr typ. ID
. Uninterruptible Power Supplies 500V 0.28Q 170ns 16A
I Motor Control applications
Features and Benefits
q SuperFast body diode eliminates the need for external
diodes in ZVS applications.
q Lower Gate charge results in simpler drive requirements.
. Enhanced dv/dt capabilities offer improved ruggedness.
q Higher Gate voltage threshold offers improved noise
immunity. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves@ 10V 16
b @ Tc = 100°C Continuous Drain Current, VGS @ 10V 11 A
G, Pulsed Drain Current C) 64
PD @Tc = 25°C Power Dissipation 220 W
Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb'in (1.1N'm)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 16 MOSFET symbol (A a
(Body Diode) A showing the i) g
ISM Pulsed Source Current - - 64 integral reverse G
\_/ ck
(Body Diode) (D p-n junction diode.
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 16A, VGs = 0V C)
trr Reverse Recovery Time - 170 250 ns To = 25°C, IF = 16A
- 220 330 Tu-- 125°C, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge - 470 710 nC To = 25°C, Is = 16A, VGs = 0V (E)
- 810 1210 Tu-- 125°C, di/dt = 100A/ps ©
IRRM Reverse Recovery Current - 7.3 11 A T J = 25°C
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
07/18/03
IlRFP17N50L
International
TOR Rectifier
Static ti) T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.60 - VI°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 0.28 0.32 Q I/ss = 10V, b = 9.9A G)
Vesan) Gate Threshold Voltage 3.0 - 5.0 V I/os = VGS, b = 250pA
loss Drain-to-Source Leakage Current - - 50 pA Vos = 500V, I/ss = 0V
- - 2.0 mA Vos = 400v, I/ss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Re Internal Gate Resistance - 1.4 - Q f= 1MHz, open drain
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Fowvard Transconductance 11 - - S Vros = 50V, ID = 9.9A
09 Total Gate Charge - - 130 ID = 16A
Qgs Gate-to-Source Charge - - 33 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 59 l/ss = 10V, See Fig. 7 & 15 ©
tdmn) Tum-On Delay Time - 21 - VDD = 250V
tr Rise Time - 51 - ns ID = 16A
Idiom Tum-Off Delay Time - 50 - Rs = 7.59
t, Fall Time - 28 - l/ss = 10V, See Fig. 14a & 14b 6)
Ciss Input Capacitance - 2760 - Ves = 0V
Cass Output Capacitance - 325 - I/css = 25V
Crss Reverse Transfer Capacitance - 37 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 3690 - pF VGs = ov, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 84 - VGS = 0V, Vos = 400V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 159 - l/ss = 0V,VDS = 0V to 400V ©
Cass eff. (ER) Effective Output Capacitance - 120 -
(Energy Related)
Avalanche Characteristics
bol Parameter
EAR va
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rm Junction-to-Case - 0.56
Ross Case-to-Sink, Flat, Greased Surface 0.50 - ''CA/V
Rm Junction-to-Ambient - 62
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L = 3.0mH, Rs = 259,
IAS = 16A. (See Figure 12).
C3) ISD = 16A, di/dt S 347A/ps, VDD f V(BR)DSS:
T J 3 150°C.
2
co Pulse width I 300ps; duty cycle 3 2%.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% Voss.
Coss eff.(ER) is a fnted capacitance that stores the same energy
as Coss while Vos is rising from O to 80% Voss.
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