IRFP1405PBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications.TO-247ACAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Current, V @ 10V ..
IRFP140A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyR = 0.052 ΩDS(on) Rugged Gate Oxide ..
IRFP140N ,33A, 100V, 0.040 Ohm, N-Channel Power MOSFETPD - 91343BIRFP140N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 100V ..
IRFP140N. ,33A, 100V, 0.040 Ohm, N-Channel Power MOSFETapplications where higher power levels preclude the use ofTO-220 devices. The TO-247 is similar bu ..
IRFP140NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
TOR Rectifier"TerFETe Power MOSFET
a Advanced Process Technology
Dynamic dv/dt R ..
IRFP150 ,40A, 100V, 0.055 Ohm, N-Channel Power MOSFETInternational
1:212 Rectifier
PD-9.441 D
IRFP150
HEXFETO Power MOSFET
Dynamic dv/dt ..
ISL6558CR-T ,Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage PositioningISL6558®Data Sheet December 2003 FN9027.6Multi-Purpose Precision Multi-Phase PWM
ISL6558CRZ-T , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
ISL6558IR ,Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage PositioningFeaturesController With Optional Active Voltage • Multi-Phase Power ConversionPositioning- 2-, 3-, ..
ISL6558IRZ , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
ISL6558IRZ , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
ISL6558IRZ-T , Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
IRFP140
31A, 100V, 0.077 Ohm, N-Channel Power MOSFET
31A, 100V , 0.077 Ohm, N-Channel Power
MOSFETThis N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17421.
Features 31A, 100V
DS(ON)
= 0.077 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering InformationNOTE: When ordering, include the entire part number.
SOURCE
DRAIN
(FLANGE)
GATE
