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IRFP064NIORN/a34avai55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP064NPBFIRN/a12000avai55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP064N-IRFP064NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 9.1383A
IRFP064N
HEXFET® Power MOSFET
International
TOR, Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D VDSS = 55V
RDS(on) = 0.0089
|D=11OA©
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 110©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 80© A
IDM Pulsed Drain Current (MS 390
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 20 V
EAg Single Pulse Avalanche Energy©© 480 m]
IAR Avalanche CurrentC) 59 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt ©S 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °CNV
Ran Junction-to-Ambient - 40
8/25/97

IRFPO64N
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coeffcient - 0.057 - V/°C Reference to 25°C, ID = ImAS
RDs(on) Static Drain-to-Source On-Resistance - - 0.008 f2 VGs = 10V, ID = 59A (9
VGs(m) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 42 - - S VDs = 25V, ID = 59AS
loss Drain-to-Source Leakage Current - - 25 pA l/os = 55V, VGS = 0V
- - 250 Vos = 44V, VGs = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 170 ID = 59A
Qgs Gate-to-Source Charge - - 32 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 74 VGS = 10V, See Fig. 6 and 13 C96)
tum) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 100 - ns ID = 59A
tum) Turn-Off Delay Time - 43 - R3 = 2.59
tf FallTime - 70 - RD = 0.399, See Fig. 10®®
. Between lead, D
LD Internal Drain Inductance - 5.0 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 13 - from package G
and center of die contact s
Ciss Input Capacitance - 4000 - VGs = 0V
Coss Output Capacitance - 1300 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 480 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 110© . _
(Body Diode) showing the ar
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) co - - 390 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 59A, VGs = 0V ©
trr Reverse Recovery Time - 110 170 ns T J = 25°C, IF = 59A
Qrr Reverse Recovery Charge - 450 680 nC di/dt = 100A/ps @363
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 190pH
Rs--- 259, IAS = 59A. (See Figure 12)
© ISD S 59A, di/dt S 290A/ps, VDD f V(BR)DSS:
TJS175°C
© Pulse width f 300ps; duty cycle 3 2%.
S Uses IRF3205 data and test conditions
© Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4

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