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IRFP064IRN/a370avai60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP064
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
Rectifier
PD-9.754
IRFP064
HEXFET® Power MOSFET
Dynamic dv/dt
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Repetitive Avalanche Rated
Ultra-Low On-Resistance
Very Low Thermal Resistance
Isolated Central Mounting Hole
175°C Operating Temperature
Rating
VDSS = 60V
Rosmn) = 0.0099
on-resistance and cost-effectiveness.
The TO-DI package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-MMC
Absolute Maximum Ratings
Parameter Max. Units _
lo @ To = 25°C Continuous Drain Current, l/tss © 10 V 70*
lo © Tc = 100°C Continuous Drain Current, Ves @ 10 V 70* A
IDM Pulsed Drain Current C) 520
Pro @ Tc = 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 WPC
Ves Gate-to-Source Voltage k20 V
EAS Single Pulse Avalanche Energy © 1000 -/rr"
IAR Avalanche Current C) 70 A
EAR Repetitive Avalanche Energy C) 30 mJ
1 dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction and -55 to +175
Tsm Storage Temperature Range =
7 Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbt-in (1.1 Nom)
Thermal Resistance
Parameter Min, Typ. Max. Units
Reno Junction-to-Case - 0.50
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
Ram Junction-to-Ambient i - 40 _L,
IRFP064
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
. Parameter Min. Typ. Max. Units Test Conditions
iV(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS=0V, ID: 250pA
AV(BH)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.048 - V/°C Reference to 25°C, b= 1mA
RDS(on) Static Drain-to-Source On-Resistance - -..- 0.009 Q VGs=10V, [0:78A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 2500A
grs Forward Transconductance 38 - - S Vos=25V, |D=78A co
loss Drain-to-Source Leakage Current - - 25 pA 1/ros--60V, Ver=0V
- - 250 VDs=48V, VGs=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vas=20V
Gate-to-Source Reverse Leakage - - -100 Nuv---2tN
ch Total Gate Charge - - 190 ln=130A
Qgs Gate-to-Source Charge - - 55 nC lhos=48V
di Gate-to-Drain ("Miller") Charge - - 90 Ves=1OV See Fig. 6 and 13 ©
td(on) Tum-On Delay Time - 21 - VDD=3OV
tr Rise Time - 190 - ns [0:130A
tam") Turn-Off Delay Time - 110 - RG=4.3§2
tr Fall Time -- 190 - RD=O.22Q See Figure 10 ©
LD Internal Drain Inductance -- 5.0 Fer.-'. , 'rit,v,1,/,e('ll ste. ') D
nH from package GE )
Ls Internal Source Inductance - 13 - and center 6f
die contact s
Ciss Input Capacitance - 7400 - VGs=0V
Cass Output Capacitance - 3200 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 540 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 70* MOSFET symbol D
(Body Diode) A showing the Lr,--':
ISM Pulsed Source Current - - 520 integral Pverre G _'-"
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 3.0 V TJ=25°C, Is=130A, VGs=0V ©
tn Reverse Recovery Time - 160 250 ns TJ=25°C, IF=130A
er Reverse Recovery Charge - 0.90 1.7 pC dildt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=69PH
RG=25(2, |As=130A (See Figure 12)
* Current limited by the package, (Die Current =130A)
TJS175°C
© Isos130A, di/de300A/ps, VDDSV(BR)DSS,
G) Pulse width 5 300 us; duty cycle 32%.
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