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IRFP044N
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-9.1410A
IRFP044N
HEXFET® Power MOSFET
International
TOR. Rectifier
0 Advanced Process Technology
o Dynoamlc dv/dt Rating VDSS = 55V
o 175 C Operating Temperature
0 Fast Switching '
i4 r R = 0.0200
o Fully Avalanche Rated G A DS(on)
ID = 53A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, . (Sy lk
combined with the fast switching speed and ruggedized g,
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 53
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 37 A
IDM Pulsed Drain Current (DC) 180
PD @Tc = 25''C Power Dissipation 120 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©6) 230 m]
IAR Avalanche CurrentC) 28 A
EAR Repetitive Avalanche Energy© 12 mJ
dv/dt Peak Diode Recovery dv/dt @6) 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .3
Recs Case-to-Sink, Flat, Greased Surface 0.24 - 'C/W
RQJA Junction-to-Ambient - 40
8/25/97
IRFP044N International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.017 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.020 f2 VGs = 10V, ID = 29A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 16 - - S VDs = 25V, ID = 28AS
loss Drain-to-Source Leakage Current - - 25 pA l/os = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 61 ID = 28A
Qgs Gate-to-Source Charge - - 13 n0 VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 24 V63 = 10V, See Fig. 6 and 13 ©(0
tum) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 80 - ns ID = 28A
tum) Turn-Off Delay Time - 43 - R3 = 129
tf Fall Time - 52 - RD = 0.989, See Fig. 10 ((i)6)
LD Internal Drain Inductance - 5.0 - Between Igad, D
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 13 - from package G
and center of die contact s
Ciss Input Capacitance - 1500 - VGs = 0V
Coss Output Capacitance - 450 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the _-.,
ISM Pulsed Source Current integral reverse G EA
(Body Diode) C) - - 180 p-n junction diode. S
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 29A, VGs = 0V GD
trr Reverse Recovery Time - 72 110 ns T J = 25°C, IF = 28A
Qrr Reverse Recovery Charge - 210 310 PC di/dt = -1OOA/ps q)6)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by (ii) Pulse width f 300ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 410pH 6) Uses IRFZ46N data and test conditions
Rs = 259, IAS = 28A. (See Figure 12)
© ISD S 28A, di/dt S 240A/ps, VDD S V(BR)ross,
To S 175°C
