IRFN214B ,250V N-Channel B-FETFeaturesThese N-Channel enhancement mode power field effect 0.6A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFN9140 ,-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 packagePD - 91553FIRFN9140JANTX2N7236UJANTXV2N7236UJANS2N7236UPOWER MOSFETREF:MIL-PRF-19500/595SURFACE MOU ..
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IRFP044 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
. Isolated Cent ..
IRFP044N ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use ofTO-220 devices. The TO-247 is similar bu ..
IRFP044NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar b ..
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IRFN214B
250V N-Channel B-FET
IRFN214B IRFN214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.6A, 250V, R = 2.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.1 nC) planar, DMOS technology. Low Crss ( typical 7.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for electronic lamp ballast. D ! ! "" !!"" "" G! ! "" TO-92 IRFN Series ! ! G D S S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter IRFN214B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 0.6 A D A - Continuous (T = 70°C) 0.4 A A I Drain Current - Pulsed (Note 1) 2.4 A DM V Gate-Source Voltage ± 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 45 mJ AS I Avalanche Current (Note 1) 0.6 A AR E Repetitive Avalanche Energy (Note 1) 0.18 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns P Power Dissipation (T = 25°C) 1.8 W D L - Derate above 25°C 0.01 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Lead -- 70 °C/W θJL R Thermal Resistance, Junction-to-Ambient -- 100 °C/W θJA ©2004 Rev. A, May 2004
