IRFM350 ,400V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM440 ,500V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM460 ,500V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM9140 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM9240 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFML8244TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97587AIRFML8244TRPbFHEXFET Power MOSFETV 25 VDSV ± 20 VGS Max
IRFM350
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
PD - 90491 D
International
. . IRFM350
TOR, 'uctifier JANTX2N7227
POWER MOSFET . JANTXV2N7227
THRU-HOLE (TO-254AA) REF:MlL-PRF-''19500/592
400V, N-CHANNEL
Product Summary HEXFET® MOSFETTECHNOLOGY
Part Number RDS(on) ID
IRFM350 0.3159 14A #3:fo
HEXFET® MOSFET technology is the key to International
RecWer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transConductanCe. HEXFET TO-254AA
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch- Featu res:
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
. . . a Simple Drive Requirements
mg power supplies, motor controls, inverters, choppers, n Ease of Paralleling
audio amplifiers, high energy pulse circuits, and virtually a Hermetically Sealed
any application where high reliability is required. The n Electrically Isolated
HEXFETtransistor’s totally isolated package eliminates the a Dynamic dv/dt Rating
need for additional iselating material between. the device a Light-weight
and the heatsink. This Improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 14
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 9.0 A
IDM Pulsed Drain Current C) 56
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 700 mJ
IAR Avalanche Current CO 14 A
EAR Repetitive Avalanche Energy (D 15 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
For footnotes refer to the last page
1
1/29/02
IRFM350
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 400 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.46 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.315 VGS = 10V, ID = 9.0A
Resistance - - 0.415 VGS = 10V, ID = 14A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 6.0 - - S M I/DS > 15V, ts = 9.0A G)
loss Zero Gate Voltage Drain Current - - 25 VDS= 320V ,VGs=0V
- - 250 “A VDS = 320V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 110 VGS =10V, ID = 14A
Qgs Gate-to-Source Charge - - 18 nC VDS =200V
di Gate-to-Drain ('Miller') Charge - - 65
td(on) Turn-On Delay Time - - 35 VDD = 200V, ID = 14A,
tr Rise Time - - 190 VGS =10V, RG = 2.359
td(off) Turn-Off Delay Time - - 170 ns
tt FallTime - - 130
LS + LD Total Inductance - 4.0 - nH Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Ciss Input Capacitance - 2600 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 660 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 250 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 14 A
ISM Pulse Source Current (Body Diode) co - - 56
VSD Diode Forward Voltage - - 1.7 V Tj = 25°C, ls = 14A, VGS = 0V ©
trr Reverse Recovery Time - - 1200 nS Tj = 25°C, IF = 14A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 11 PC VDD 3 50V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 0.83
RthCS Case-to-sink - 0.21 - 'CIW
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
