IRFM240 ,200V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM250 ,200V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM350 ,400V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM440 ,500V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM460 ,500V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFM9140 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
ISL6556B ,PWM Controller, 2-4 Phase, 6-Bit VID, V OUT = 0.8375 to 1.60V, ?.5% Reg, R DS (on)sensing and Internal Temp Compensation, >1MHz operation, Application = uP Core Voltage VR10.X, use with HIP6601BFeatureswith 6-Bit DAC and Programmable • Precision Multi-Phase Core Voltage RegulationInternal Tem ..
ISL6556BCB ,Optimized Multi-Phase PWM Controller with 6-Bit DAC and Programmable Internal Temperature Compensation for VR10.X ApplicationISL6556B®Data Sheet March 2003 FN9097.1Optimized Multi-Phase PWM Controller
ISL6556BCR ,Optimized Multi-Phase PWM Controller with 6-Bit DAC and Programmable Internal Temperature Compensation for VR10.X ApplicationISL6556B®Data Sheet March 2003 FN9097.1Optimized Multi-Phase PWM Controller
ISL6556BCRZ-T , Optimized Multi-Phase PWM Controller with 6-Bit DAC and Programmable Internal Temperature Compensation for VR10.X Application
ISL6557ACB ,Multi-Phase PWM Controller for Core-Voltage RegulationISL6557A®Data Sheet August 2003 FN9068.2Multi-Phase PWM Controller for
ISL6557CB ,Multi-Phase PWM Controller for Core-Voltage Regulationfeatures on the ISL6557 include Dynamic-VID™ • Precision Enable Thresholdtechnology allowing seamle ..
IRFM240
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
PD - 90555D
International
. . IRFM240
TOR, 'uctifier JANTX2N7219
POWER MOSFET . JANTXV2N7219
THRU-HOLE (TO-254AA) REF:MlL-PRF-''19500/596
200V, N-CHANNEL
Product Summary HEXFET® MOSFETTECHNOLOGY
Part Number RDS(on) ID
IRFM240 0.18 n 18A . :55“
x "c:ct'iie'
HEXFET® MOSFET technology is the key to International
RecWer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET TO-254AA
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch- Featu res:
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
. . . a Simple Drive Requirements
mg power supplies, motor controls, inverters, choppers, n Ease of Paralleling
audio amplifiers, high energy pulse circuits, and virtually a Hermetically Sealed
any application where high reliability is required. The n Electrically Isolated
HEXFETtransistor’s totally isolated package eliminates the n D namic dv/dt Ratin
need for additional isolating material between the device a Liyht-wei ht g
and the heatsink. This improves thermal efficiency and g g
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 18
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 11 A
IDM Pulsed Drain Current C) 72
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 450 mJ
IAR Avalanche Current CO 18 A
EAR Repetitive Avalanche Energy (D 12.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 2.6 (Typical) g
For footnotes refer to the last page
1
1/29/02
IRFM240
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.29 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.18 VGS = 10V, t = 11A
Resistance - - 0.25 VGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 6.1 - - S M 1/DS > 15V, log, = 11A ©
loss Zero Gate Voltage Drain Current - - 25 VDS= 160V ,VGs=0V
- - 250 “A VDS = 160V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 60 W33 =10V, ID = 18A
Qgs Gate-to-Source Charge - - 10.6 nC VDS = 100V
di Gate-to-Drain ('Miller') Charge - - 37.6
td(on) Turn-On Delay Time - - 20 VDD = 100V, ID = 18A,
tr Rise Time - - 105 VGS =10V, RG = 9.19
td(off) Turn-Off Delay Time - - 58 ns
tt FallTime - - 67
LS + LD Total Inductance - 4.0 - nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Ciss Input Capacitance - 1300 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 400 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 130 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 18 A
ISM Pulse Source Current (Body Diode) co - - 72
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, ls = 18A, VGS = 0V ©
trr Reverse Recovery Time - - 500 nS Tj = 25°C, IF = 18A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 5.3 PC VDD 3 50V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.0
RthJS Case-to-sink - 0.21 - °CNV
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
