IRFL9110 ,-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 packageInternational PD-9.864
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IRFL9110-IRFL9110TR
-100V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
PD-9.864
llrtternational
x4212 Rectifier IRFL9110
HEXFET® Power MOSFET
0 Surface Mount
0 Available in Tape & Reel D -
o Dynamic dv/dt Rating VDSS - -1 00V
0 Repetitive Avalanche Rated
o P-Channel G RDS(on) = 1 .29
0 Fast Switching
o Ease of Paralleling s ID = -1 AA
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mounting using vapor phase,
infra red, or wave soldering techniques. Its unique package design allows for C
easy automatic pick-and-place as with other SOT or SOIC packages but has Q \j‘ '
the added advantage of improved thermal performance due to an enlarged
tab for heatsinking. Power dissipation of greater than 1.25W is possible in a
typical surface mount application. SOT-223
Absolute Maximum Ratings
Parameter Max. _ Units
ID @ Tc .= 25°C Continuous Drain Current, Ves © -10 V -1.1
In @ To = 100°C Continuous Drain Current, VGs @ -10 V -0.69 A
los, Pulsed Drain Current 6) -8.8
PD @ To = 25°C Power Dissipation 3.1 W
PD @ TA = 25°C Power Dissipation (PCB Mount)" 2.0 ar----"
Linear Derating Factor 0.025 W PC
Linear Derating Factor (PCB Mount)" 0.017
I/tss Gate-to-Source Voltage _ 4:20 V
EAs Single Pulse Avalanche Energy (2 100 md
IAR Avalanche Current C) -1.1 A
EAR Repetitive Avalanche Energy (D 0.31 mJ
dv/dt Peak Diode Recovery dv/dt Cs) -5.5 V/ns
Ta TSTG Junction and Storage Temperature Range -55 to +150 Q C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min. Typ. Max. I Units
ch Junction-to-PCB - -- 40 O C NV
RNA Junction-to-Ambient (PCB mount)" - - 60
" When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
iRFL9110
Electrical Characteristics @ T.) TA' 25°C (unless otherLse specified)
Parameter ! Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage ':,' -100 - - V VGs=OV, |D=-250}1A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.091 - V/°C Reference to 25°C, Io=-1mA
Roam) _ Static Drain-to-Source On-Resistance ' - - 1.2 C2 Ves=-10V, ID=-0.66A C4D
VGs(th) Gate Threshold Voltage -2.0 - -4.0 V Vros=Vas, |D=-250}1A
Ps Forward Transconductance 0.82 - - S Vos=-50V. |o=-0.66A ©
loss Drain-to-Source Leakage Current - - -100 0A Vrys---100V, Vss=0V
- - -500 Vos=-80V, Vss=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - -100 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
Qg Total Gate Charge - - 8.7 ID=-4.OA
Qgs Gate-to-Source Charge - - 2.2 no VDs=-80V
di Gate-to-Drain ("Miller") Charge - - 4.1 VGs=-10V See Fig. 6 and 13 (E)
Mon) Turn-On Delay Time - 10 - VDo=-50V
tr Rise Time - 27 - n s kr---4.OA
tam) Turn-Off Delay Time - 15 - RG=24Q
t, Fall Time - 17 - RD=11Q See Figure 10 GD
Lo Internal Drain Inductance - 4.0 - t,itl1(i"ii:rdgi'nd,') r-tli,
nH from package si:iitii'-r)
Ls Internal Source Inductance - 6.0 - Ind center df FL
die contact 5
Ciss Input Capacitance - 200 - l/tss-HN
Coss Output Capacitance - 94 - pF Vos=-25V I
Crss Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - -1 1 MOSFET symbol D
(Body Diode) . A showing the F1,
ISM Pulsed Source Current - - -8 8 integral reverse G (tff
(Body Diode) C) . p-n junction diode. S
Vso Diode Forward Voltage - - -5.5 V TJ=25OC, Is=-1.1A, VGs=0V C4)
trr Reverse Recovery Time _....... 80 160 ns TJ=2SOC, IF=-4.0A
er Reverse Recovery Charge - 0.15 0.30 wc di/dt=100A/ps OD
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© 1/DD=-25V, starting TJ=25°C, L=7.7mH
Ra=25f2, lAs=-4.4A (See Figure 12)
© Isog-4.0A, di/dtsi-75A/ws, VDDSV(BR)DSS.
TJS1 50°C
(ip Pulse width 3 300 us; duty cycle 32%.
