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IRFL9014-IRFL9014.-IRFL9014TR
-60V Single P-Channel HEXFET Power MOSFET in a SOT-223 package
PD - 90863A
International
IEER Rectifier IRFL9014
HEXFET© Power MOSFET
Surface Mount
Available in Tape & Reel D -
Dynamic dv/dt Rating VDss - -60V
Repetitive Avalanche Rated
P-Channel R = Q
Fast Switching DS(on) 0.50
Ease of Paralleling
ID = -1.8A
Description s
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package designallows foreasy automaticpick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of SOT-223
grreaterthan 1.25W is possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ -10 V -1.8
In @ Tc = 100°C Continuous Drain Current, I/ss @ -10 V -1.1
IDM Pulsed Drain Current OD -14
PD @Tc = 25°C Power Dissipation 3.1
PD @TA = 25°C Power Dissipation (PCB Mount)** 2.0 W
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)** 0.017 W/°C
I/ss Gate-to-Source Voltage -/+20 V
EAs Single Pulse Avalanche Energy© 140 mJ
IAR Avalanche CurrenK0 -1.8 A
EAR Repetitive Avalanche Energy0) 0.31 mJ
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150
Soldewring Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-PCB - 40 o C NV
' Junction-to-Ambient. (PCB Mount)" - 60
** When mounted on 1" SQUARE pcb (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1
2/1/99
|RFL9014
International
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -60 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.059 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.50 n VGs = -10V, ID = 1.1A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGS, ID = 250pA
gfs Forward Transconductance 1.3 - - S VDs = -25V, ID = 1.1A GD
loss Drain-to-Source Leakage Current - - -100 pA Vros = -60V, VGS = 0V
- - -500 VDS = -48V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
Qo Total Gate Charge - - 12 ID =-6.7A
Qqs Gate-to-Source Charge - - 3.8 nC VDS =-48V
di Gate-to-Drain ("Miller") Charge - - 5.1 l/ss = -10V, See Fig. 6 and 13 (9
td(on) Turn-On Delay Time - 11 - VDD = -30V
tr Rise Time - 63 - ns ID = -6.7A
td(off) Turn-Off Delay Time - 9.6 - Rs = 24 n
tf Fall Time - 31 - RD = 4.0 o, See Fig. 10 G)
u, Internal Drain Inductance - 4.0 - Between lead, 6mm(0.25in)
nH from package and center SQ _)
Ls Internal Source Inductance - 6.0 - ofdie contact. S
Ciss Input Capacitance - 270 - l/ss = 0V
Coss Output Capacitance - 170 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 31 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.8 A showing the H"
ISM Pulsed Source Current 14 integral reverse G $1
(Body Diode) C) - - - p-njunction diode. s
VSD Diode Forward Voltage - - -5.5 V Tu = 25°C, Is = -1.8A, VGs = 0V 6)
trr Reverse Recovery Time - 80 160 ns Tu = 25°C, IF =-6.7A
Qrr Reverse RecoveryCharge - 0.096 0.19 pC di/dt = 100A/ps G)
ton Forward Turn-On Time Intrinsictum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Vrm=-25V, starting Tu = 25°C, L =50 mH
R6 = 259, IAS = -1.8A. (See Figure 12)
© Iso f -6.7A, di/dt $90A/LIS, VDD f 1/(BR)Dss,
Tu S 150°C
GD Pulse width S 300ps; duty cycle 5 2%.
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