IRFL4315 ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 94445IRFL4315SMPS MOSFET®HEXFET Power MOSFETV R max I
IRFL4315 ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageApplicationsDSS DS(on) D High frequency DC-DC converters150V 185mΩ Ω Ω Ω Ω@V = 10V 2.6AGSBenefits ..
IRFL4315TR ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageApplicationsDSS DS(on) D High frequency DC-DC converters150V 185mΩ Ω Ω Ω Ω@V = 10V 2.6AGSBenefits ..
IRFL4315TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package IRFL4315PbFHEXFET Power MOSFETV R max I
IRFL4315TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageApplicationsDSS DS(on) D High frequency DC-DC converters150V 185m@V = 10V 2.6AGSBenefits Low Gat ..
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ISL6550 ,Voltage Monitor and Supervisor, Output 0.8 to 5V via 5-Bit DAC, 3 Logic Options, 5V Ref, Prog UV and OV, Use with ISL6551Block Diagram for • Programmable DAC Range, within 0.8–5.0Vreference.• Programmable undervoltage an ..
IRFL4315-IRFL4315TR
150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
PD - 94445
TOR Rectifier SMPS MOSFET IRFL4315
HEXFET© Power MOSFET
Applications VDss RDS(on) max ID
o High frequency DC-DC converters 150V 185mf2@Vas = 10V 2.6A
Benefits
o Low Gate to Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage S O T -2 2 3
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 10V 2.6
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.1 A
IDM Pulsed Drain Current C) 21
PD @TA = 25°C Power Dissipation© 2.8 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 6.3 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJA Junction-to-Ambient (PCB Mount, steady state)© - 45 °CNV
Notes (D through © are on page 8
1
06/14/02
IRFL4315
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.19 - V/°C Reference to 25°C, ID = 1mA ©
Rosmn) Static Drain-to-Source On-Resistance - - 185 mn VGS = 10V, ID = 1.6A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 PA Vos = 150V, VGS = 0V
- - 250 Vos = 120V, VGs = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A N/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 3.5 - - S Vros = 50V, ID = 1.6A
% Total Gate Charge - 12 19 ID = 1.6A
Qgs Gate-to-Source Charge - 2.1 3.1 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 6.8 10 VGS = 10V
lawn) Turn-On Delay Time - 8.4 - VDD = 75V
tr Rise Time - 21 - ns ID = 1.6A
td(off) Turn-Off Delay Time - 20 - Rs = 159
tf Fall Time - 19 - VGs = 10V ©
Ciss Input Capacitance - 420 - VGs = 0V
Coss Output Capacitance - 100 - Vos = 25V
Crss Reverse Transfer Capacitance - 25 - pF f = 1.0MHz
Coss Output Capacitance - 720 - N/ss = 0V, Vos = 1.0V, f = 1.0MHz
Cogs Output Capacitance - 48 - N/ss = 0V, Vros = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 98 - VGs = 0V, Vros = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 38 m]
IAR Avalanche CurrentCD - 3.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2 6 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 21 integral reverse G
(Body Diode) C) p-n junction diode. s
I/so Diode Forward Voltage - - 1.5 V TJ = 25°C, ls = 2.1A, VGS = 0V ©
trr Reverse Recovery Time - 61 91 ns TJ = 25°C, IF = 1.6A
Gr Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps ©
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