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IRFL4310TRPBFIRFN/a5000avai100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package


IRFL4310TRPBF ,100V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 95144IRFL4310PbF®HEXFET Power MOSFETD Surface MountV = 100VDSS Dynamic dv/dt Rating Fast S ..
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IRFL4310TRPBF
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
PD - 95144
International
Tart, Rectifier lRFv4310PbF
HEXFET6 Power MOSFET
0 Surface Mount
Dynamic dv/dt Rating
Fast Switching
Ease of Paralleling . A RDS(on) = 0209
Advanced Process Technology G
Ultra Low On-Resistance
Lead-Free ID = 1.6A
VDSS = 100V
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a wide variety ofapplications.
The SOT-223 package is designed for surface-mount
using vaporphase, infra red, orwave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has s OT'223
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OW is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID © TA = 25°C Continuous Drain Current, Vss © 10V** 2.2
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V* 1.6 A
In @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
IDM Pulsed Drain Current C) 13
Po @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)' 1.0 W
Linear Derating Factor (PCB Mount)' 8.3 mWPC
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 47 mJ
IAR Avalanche CurrentCD 1.6 A
EAR Repetitive Avalanche EnergyCD' 0.10 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TO,TSTG Junction and Storage Temperature Range -55 to + 150 (
Thermal Resistance
Parameter Typ. Max. Units
RQJA Junction-to-Amb. (PCB Mount, steady state)' 93 120 o C /W
RQJA Junction-to-Amb. (PCB Mount, steady state)" 48 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
04/22/04

IRFL4310PbF International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmSS Drain-to-Source Breakdown Voltage 100 - - V l/tss = 0V, lo = 250PA
AmeDSS/ATJ Breakdown VoltageTemp. Coefficient -.-.- 0.12 --.- VPC Reference to 25°C, ID = 1mA
RDS(on) StaticDrain-to-SourceOn-Resistance - - O.20 Q Vss = lov, ID = 1.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/cs = Vas, ID = 250pA
gfs Forward Transconductance 1.5 - - S Vos = 50V, ID = 0.80 A
loss Drain-to-Source Leakage Current - - 25 PA Vos = 100V, Vas = 0V
- - 250 Vros = 80V, VGS = 0V, Tu = 125°C
I Gate-to-Source Forward Leakage - -- 100 n A Viss = 20V
GSS Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
00 Total Gate Charge - 17 25 ID = 1.6A
Cas Gate-to-Source Charge - 2.1 3.1 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 7.8 12 l/ss = 10V, See Fig. 6 and 13 ©
titem) Turn-On Delay Time - 7.8 - l/oo = 50V
tr RiseTime - 18 - ns ID =1.6A
td(off) Turn-Off Delay Time - 34 - Rs = 6.2 Q
tf Fall Time - 2O - RD = 31 Q, See Fig. 10 ©
Ciss Input Capacitance - 330 - Ves = 0V
Cass Output Capacitance - 92 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 0 91 MOSFET symbol D
(Body Diode) - - . A showing the
Iss, Pulsed Source Current 13 integral reverse G
(Body Diode) (D - - p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 1.6A, Ves = 0V ©
trr Reverse Recovery Time - 72 110 ns TI, = 25°C, IF = 1.6A
G, Reverse RecoveryCharge - 210 320 nC di/dt = 100A/ps (ii)
Notes:
co Repetitive rating; pulse width limited by © ISD S 1.6A, di/dt S 340A/ps, Vor) S V(BR)DSSI
max. junction temperature. ( See fig. 11 ) To g 150°C
CON/oo = 25V, starting Tu = 25°C, L = 9.2 mH
Re = 259, IAS = 3.2A. (See Figure 12) © Pulse width S 300ps; duty cycle S 2%.
2

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