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IRFL110IORN/a750avai100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
IRFL110TRIRN/a13117avai100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package


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IRFL110-IRFL110TR
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
Tart, Rectifier
HEXFET® Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The SOT-223 package is designed forsurtace-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows foreasy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
PD - 90861A
|RFL11O
VDSS = 100V
RDS(on) = 0.54n
ID=1.5A
an enlarged tab for heatsinking. Power dissipation of S O T Al 2 3
grreaterthan 1.25Wis possible in a typical surface mount
application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10 V 1.5
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 0.96
IDM Pulsed Drain Current co 12 A
Pro @Tc = 25°C Power Dissipation 3.1
Po @TA = 25°C Power Dissipation (PCB Mount)" 2.0 W
Linear Derating Factor 0025
Linear Derating Factor (PCB Mount)" 0.017 wrc
VGs Gate-to-Source Voltage -/+20 V
EAS Single Pulse Avalanche Energy© 150 mJ
IAR Avalanche Current© 1.5 A
EAR Repetitive Avalanche Energy© 0.31 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 a
Soldewring Temperature, for 10 seconds 300 (1.6mm from case) C
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-PCB - 40 a C NV
ReJA Junction-to-Ambient. (PCB Mount)" - 60
** When mounted on I" square pcb (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
1
1/28/99
|RFL11O
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRmss Drain-to-Source BreakdownVoltage 100 - - V VGs = 0V, ID = 250115
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.63 - V/°C Reference to 25°C, ID = 1mA
RDS(on) StatjcDrain-ttFSourceOn-Resistance - 0.54 n VGS = 10V, ID = 0.90A © -
VGs(m) Gate Threshold Voltage . - 4.0 V Vos = Vss, ID = 250pA
gts Forward Transconductance 1.1 - - S VDs = 50V, ID = 0.90AC4)
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 8.3 ID = 5.6A
Cas Gate-to-Source Charge - - 2.3 nC I/rss = 80V
di Gate-to-Drain ("Miller") Charge - - 3.8 VGS = 10V, See Fig. 6 and 13 ©
tdmn) Turn-On Delay Time - 6.9 - VDD = 50V
tr Rise Time - 16 - ns lo = 5.6A
tam) Turn-Off Delay Time - 15 - Rs = 24 Q
tf Fall Time - 9.4 - RD = 8.4 Q, See Fig. 10 ©
LD Internal Drain Inductance - 4.0 - Between lead, 6mm(0.25in) D
nH from package and center 6&3
Ls Internal Source Inductance - 6.0 - ofdie contact. “S
Ciss InputCapacitance - 180 - VGs = 0V
Coss OutputCapacitance - 81 - pF VDS = 25V
Crss Reverse TransferCapacitance - 15 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.5 showing the
ISM Pulsed Source Current 12 A integral reverse G
(Body Diode) C) p-njunction diode. s
N/sn Diode Forward Voltage - - 2.5 V To = 25°C, ls = 1.5A, VGS = 0V ©
trr Reverse Recovery Time - 100 200 ns To = 25°C, IF = 5.6A
er Reverse RecoveryCharge - 0.44 0.88 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsictum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD=25V, starting Tu = 25°C, L = 25 mH
Re: 259, MS = 3.0A (See Figure 12)
© ISD f 5.6A, di/dt S 75A/ps, VDD S V(BR)DSS!
T J s: 150°C
© Pulse width s: 300ps; duty cycle s: 2%.

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