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IRFL1006-IRFL1006TR
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
International
TOR Rectifier
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifer
utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This beneht,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, orwave soldering techniques.
PD - 91876
IRFL1006
HEXFET® Power MOSFET
VDSS = 60V
A RDS(on) = 0.22n
ID = 1.6A
Its unique package design allows for easy automatic pick- S O T -2 2 3
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1 .OW is possible in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGs @ 10N/** 2.3
In @ TA = 25°C Continuous Drain Current, VGS @ 10V* 1.6 A
In @ TA = 70°C Continuous Drain Current, VGS @ 10V* 1.3
G, Pulsed Drain Current co 6.4
Pro @TA = 25°C Power Dissipation (PCB Mount)" 2.1 W
PD @TA = 25°C Power Dissipation (PCB Mount)' 1.0 W
Linear Derating Factor (PCB Mount)* 8.3 mW/''C
VGs Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 54 mJ
IAR Avalanche CurrentCD 1.6 A
EAR Repetitive Avalanche Energy0' 0.1 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Typ. Max. Units
ReJA Junction-to-Amb. (PCB Mount, steady state)" 90 120 o C AN
ReJA Junction-to-Amb. (PCB Mount, steady state)" 50 60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
1
3/29/99
IRFL1006
International
TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.057 - Vl°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.22 n VGs = 10V, ID = 1.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
9ts Forward Transconductance 3.0 - - S Vos = 25V, ID = 1.6A
loss Drain-to-SouroeLeakageCurrent - - 25 PA Vos = 60V, VGS = 0V
- - 250 VDs = 48V, VGS = 0V, To = 125°C
lsss Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 8.0 ID = 1.6A
Qgs Gate-to-Source Charge - - 1.7 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 3.3 VGs = 10V, See Fig. 6 and 9 ©
tdon) Turn-On Delay Time - 7.4 - VDD = 30V
tr Rise Time - 18 - ns ID = 1.6A
tam) Turn-Off Delay Time - 18 - R3 = 499
" Fall Time - 17 - RD = 199, See Fig. 10 ©
Ciss Input Capacitance - 160 - VGS = 0V
Coss Output Capacitance - 55 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 19 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.6 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - 6.4 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 1.6A, VGS = 0V ©
trr Reverse Recovery Time - 31 47 ns To = 25°C, IF = 1.6A
Q,, Reverse RecoveryCharge - 46 68 nC di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by Ls+Ln)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
© Starting TJ = 25°C, L = 42 mH
Rs = 259, IAS-- 1.6A. (See Figure 12)
TJ LC 150°C
© Iso S 1.6A, di/dt S 260A/ps, I/oo f ViBR)DSS,
© Pulse width S 300ps; duty cycle f 2%.
