IRFK4H450+ ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. T Units
b @ TC=25°C Continuous Drain Cu ..
IRFK4J350+ ,ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATIONapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
IRFK6H150 ,100V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. Units
ID © TC=25°C Continuous Drain Current ..
IRFK6H350 ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
5 Parameter Max. Units
b © TC=25°C Continuous Drain Cu ..
IRFL014 ,60V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageInternational
1:212 Rectifier
PD-9.860
IRFL014
HEXFET® Power MOSFET
q Surface Mount
..
IRFL014 N ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infrared, or wave ..
ISL6534CV-T , Dual PWM with Linear
ISL6535IRZ , Synchronous Buck Pulse-Width Modulator PWM Controller
ISL6536AIB ,Four Channel Supervisory ICApplicationsvalid on all four rails. Subsequently when the monitored • Graphics Cardsvoltage on any ..
ISL6536IB ,Four Channel Supervisory ICApplicationsmonitor (VMON) inputs are satisfied the PGOOD output will be immediately released to go ..
ISL6536IB ,Four Channel Supervisory ICFeaturesThe ISL6536 is a four channel supervisory IC designed to • Adjustable undervoltage lockout ..
ISL6536IBZ , Four Channel Supervisory IC
IRFK4H450-IRFK4H450+
500V SINGLE HEXFET Power MOSFET in a TO-240AA package
Bulletin E27107
Ilrtternatiorttil
Isak Rectifier IRFK4H450,IRFK4J450
Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEX-pakm utilises the well-proven HEXFETTM die, combining V - 500V
low on-state resistance with high transconductance. These superior DS -
technology die are assembled by state of the art techniques into the
TO-240 package, featuring 2.5kV rms isolation and solid M5 screw RDS(on) = 100mg
connections. The small footprint means the package is highly suited to
power applications where space is a premium. Available in two
versions, IRFK.H... for fast switching and IRFK.J... for oscillation ID = 44A
sensitive applications.
Absolute Maximum Rating
Parameter Max. , Units
b © Tc=25°C Continuous Drain Current 41 i A
TE; @Tg=_16030_ _ -cairJou-s-rrrainlrGt- 28 A --1
bu Pulse Drain Current 176 A (D
PD @ Tc---250C Maximum Power Dissipation 500 W
VGS Gate-to-Source Voltage 20 V
VINS R.M.S. Isolation Voltage, circuit to base 25 W
T J Operating Junction Temperature Range T -40 to 150 oc
TSTG Storage Temperature Range -40 to 150 T H _ - 8C
Thermal and Mechanical Specifications
T| Parameter I Min. Typ. Max. Units
Rmuc Junction-to-Case , - - 0.25 K/W ©
RthCS Case-to-Sink, smooth 8. greased surface - 0.1 _ - W
T N Mounting Torque +10% Jr"
HEXpak to Heatsink - 5 - Nm
Busbar to H_E)fek_, - - 3 - 1 Nmtu
wt Approximate Weight - 140 - g
- 5 - ----i, 02 t
Notes:
OD - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
© - Per Module.
© - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK4H450,lRFK4J450
Electrical Characteristics tii) T J = 25°C (Unless otherwise specified)
- - Parameter - Min. Typ. I Max. Units Test Conditions
Bvoss Drain-to-Source Breakdown 500 - l - V VGS=OV, |D=1.0mA
\Loltage l
RDS(an) Static Drain-to-Source - 80 I 100 mn VGS=10V, ID=14A
ChntattystLs_ta_le, l
IMO") On-State Drain Current 44 - I - A Vos > ‘D(on) It RDS(0n)max,
VGS=10V
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vas-Ass, b--1.0mA
gfs Forward TransconductancTqT 32 52 - 1 S VDS > 50v, ID=28A
IDSS Zero Gate Voltage Drain Current - - 1.0 mA VDS=VDSmax, Vss=tht
4.0 mA VGS=1ov, TC=125°C,
VDS=VDSmax x 0.8
IGSS Gate-to-Source Leakage Forward - - 400 nA VGS=20V
|GSS Gate-to-Source Leakage Reverse - - L -400 nA Vss---20V
09 Total Gate Charge - 420 520 nC b=44A, VGS=1OV,
095 Gate-to-Source Charge l - 45 70 nC VDS=VDsmax x 0.8
di Gate-to-Drain ("Miller") Charge l - 175 260 nC
tdwnl Turn-on Delay Time IRFK4H054 f - 110 - ns VDD=25V, b=150A,
IRFK4J054 l - 125 - ns
Rise Time IRFK4H054 - 700 - - ns VGS=10V,
- IRFK4J054 - 800 -____ns__
Turn-off Delay Time JRFK4HO54 " - 400 - __ns__ Rsounar-3.3n
- - - _ _ _ - - |RFK4J054 1 - 530 - ns
1, Fall Time - IRFK4H054 - 260 - ns
1RFK4J054 - 300 - ns
Los Drain-to-Source Inductance - 18 - nH
Ciss Input Capacitance_ - _ - - 10.5 _ nF Vss=0V, VDS=25V,
Coss Output Capacitance - 2.4 . nF f=1.0MHz
Crss Reverse Transfer Capacitance - 1.0 - nF
VIN; l R.M.S. Isolation Voltage 1 2.5 - - kV Circuit to Base
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - - 44 A
(Body Diode)
ISM Pulsed Source Current - - 165 A
(Body Diode)
Vso Diode Forward Voltage - _ 1.4 V VGS=0V, IS: 44A, TC=25°C
T" Reverse Recovery Time 280 580 1200 ns di/dt=400A/ps, T £15000
O, I Reverse Recovered Charge 13.0 27.0 65.0 PC IS=44A
Notes:
69 - Pulse Width s: 300gs; Duty cycle s: 2%.
