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IRFIZ34VIRN/a6000avai60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFIZ34V
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 94053
IRFIZ34V
HEXFET© Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature . A
Fast Switching G
Fully Avalanche Rated
0 Optimized for SMPS Applications s
Description
Advanced HEXFETO Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This beneht,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety ofapplications.
International
ISER Rectifier
VDSS = 60V
RDS(on) = 28mn
ID = 20A
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to
using a 100 micron mica barrier with standard TO-220
product. The Fullpak is mounted to a heatsink using a
single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 Full-Pak
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 14 A
IDM Pulsed Drain Current co 120
Pro @Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.20 W/°C
VGs Gate-to-Source Voltage l 20 V
EAS Single Pulse Avalanche Energy@© 81 m]
IAR Avalanche Current© 30 A
EAR Repetitive Avalanche Energy© 3.0 mJ
dv/dt Peak Diode Recovery dv/dt COS 4.5 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 1O Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 5.0
ReJA Junction-to-Ambient - 65 °C/W
1
12/12/00

IRFIZ34V
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.062 - V/°C Reference to 25°C, ID = 1mAS
RDS(on) Static Drain-to-Source On-Resistance - - 28 mn VGs = 10V, ID = 18A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gis Forward Transconductance 15 - - S Vos = 25V, ID = 18AC96)
loss Drain-to-Source Leakage Current - - 25 pA Vos = 60V, VGS = 0V
- - 250 Vros = 48V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 49 ID = 30A
095 Gate-to-Source Charge - - 12 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 18 VGs = 10V, See Fig. 6 and 13S
Von) Turn-On Delay Time - 10 - VDD = 30V
tr Rise Time - 65 - ns ID = 30A
tam“) Turn-Off Delay Time - 31 - Rs = 12n
tr Fall Time - 40 - VGS = 10V, See Fig. 10 CNS)
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1120 - VGS = 0V
Coss Output Capacitance - 250 - VDS = 25V
Crss Reverse Transfer Capacitance - 59 - pF f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 20 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C) - - 120 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V TJ = 25°C, Is = 30A, VGS = 0V ©
trr Reverse Recovery Time - 70 110 ns TJ = 25°C, IF = 30A
G, Reverse Recovery Charge - 99 150 nC di/dt = 100Alps (iMi)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting To-- 25''C, L = 180pH
RG = 259, lAs = 30A. (See Figure 12)

Tut 175°C
© ISD S 30A, di/dt S 250A/ps, VDD S V(BR)DSS:
© Pulse width f 400ps; duty cycle 3 2%.
s Uses IRFZ34V data and test conditions

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