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IRFIZ34E
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR, Rectifier
PD - 9.1674A
IRFIZ34E
HEXFET® Power MOSFET
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS s
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
VDSS = 60V
RDS(on) = 0.0420
ID=21A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commerciaI-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
ID @ To = 25°C Continuous Drain Current, VGS @ 10V
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current COO)
PD @Tc = 25°C Power Dissipation
Linear Derating Factor
Ves Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy©©
IAR Avalanche Current(0©
EAR Repetitive Avalanche EnergyCD
dv/dt Peak Diode Recovery dv/dt ©©
T: Operating Junction and
TSTG Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter
Max. U nits
ReJC Junction-to-Case
ReJA Junction-to-Ambient
IRFIZB4E International
TOR liectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.042 f2 VGs = 10V, ID = 11A ©
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 6.5 - - S VDs = 25V, ID = 16A©
loss Drain-to-Source Leakage Current - - 25 PA VDS = 60V, VGS = 0V
- - 250 VDS = 48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 34 ID = 16A
Qgs Gate-to-Source Charge - - 6.8 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 14 VGS = 10V, See Fig. 6 and 13 C4)6D
td(on) Turn-On Delay Time - 7.0 - VDD = 28V
tr Rise Time - 49 - ns ID = 16A
tam) Turn-Off Delay Time - 31 - R9 = 189
tr Fall Time - 40 - RD = 1.89, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) E )
Ls Internal Source Inductance -- 7 5 - from package G
. and center of die contact s
Ciss Input Capacitance - 700 - VGs = 0V
Coss Output Capacitance - 240 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 21 MOSFET symbol D
(Body Diode) showing the __,
A . ix
ISM Pulsed Source Current integral reverse G E
(Body Diode) C06D - - 100 p-n junction diode. S
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 11A, Ves = 0V (4)
trr Reverse Recovery Time - 57 86 ns To = 25°C, IF = 16A
er Reverse RecoveryCharge - 130 200 pC di/dt = 100A/ps @©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by G) Pulse width I 300ps; duty cycle s: 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 610pH s t=60s, f=60Hz
Re: 250, IAS-- 16A. (See Figure 12)
© lsro f 16A, di/dt g 420A/ps, VDD g V(BR)DSS: © Uses |RF234N data and test conditions
Tr-t 175°C
