IRFIZ14G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInterroati9ryg
EOR Rectifier
PD-9.859
IRFIZ14G
HEXFET® Power MOSFET
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IRFIZ14G
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
bttennatitmall
BOR Rectifier
PD-9.859
IRFIZ14G
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation,---. 2.5KVRMS ©
Sink to Lead Creepage Dist.-- 4.8mm
175°C Operating Temperature
Dynamic dv/dt Rating
Low Thermal Resistance
D l/DSS = 60V
" RDS(on) L'",',: 0.209
s ID = 8.0A
on-resistance and cost-effectiveness,
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-22O product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max, Units
lo @ Tc = 25°C Continuous Drain Current, Ves a 10 V 8.0
to @ To = 100°C Continuous Drain Current, Vas © 10 V 5.7 A
IDM Pulsed Drain Current (i) 32
PD @ To = 25°C Power Dissipation 27 W
Linear Dealing Factor 0.18 WPC
Vas Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy (2) 47 ml
dv/dt Peak Diode Recovery dv/dt CD 4.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nom) 1
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 5.5 o C AN
LBW Junction-to-Ambient - - 65 I
IRFIZ14G 19R
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. I Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs=0V, ID: 250PA
AViess/ATo Breakdown Voltage Temp. Coefficient - 0.63 - VPC Reference to 25°C, lo: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.20 f2 Ves=10V, 10:4.8A ©
VGs(m) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 25OWA
ge, Forward Transconductance 2.2 - - S Vos=25V. |o=4.8A G)
loss Drain-to-Source Leakage Current - H I 25 pA 1hos=60V, Vas-HN
- - 250 VDs=48V, Ves=0V, TJ=150°C
less Gate-to-Source Fon/vard Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
Cl, Total Gate Charge - - 11 ID=1OA
Qgs Gate-to-Source Charge - - 3.1 " Vos=48V
di Gate-to-Drain ("Miller") Charge - - 5.8 VGs=10V See Fig. 6 and 13 ©
tu(on) Turn-On Delay Time - 10 - VDD=30V
tr Rise Time - 50 - ns b---10A
tam) Turn-Off Delay Time - 13 w. RG=24Q
tr Fall Time - 19 m Ro=2.7Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 'tittT.lti1nd.; D
nH from package GE
Ls Internal Source Inductance - 7.5 - apd center 6f
die contact 3
Ciss Input Capacitance - 300 - VGs=0V
Cass Output Capacitance - 160 - pF V05: 25V
Crss Reverse Transfer Capacitance - 29 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
L_ Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 8 0 MOSFET symbol D
(Body Diode) ' A showing the Cai)
ISM Pulsed Source Current - - 32 integral reverse G (tLI
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, ls=B.0A, VGs=0V Ci)
tn Reverse Recovery Time - 70 140 ns TJ=25°C, IF--10A
Orr Reverse Recovery Charge - 0.20 0.40 wc dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by © ISDS1OA, di/dtsQOA/ps, Vopsvmmoss, (5) t=60s, f=60Hz
max. junction temperature (See Figure 11) TJS175°C
© VDD=25V, starting TJ=25°C, L=8560H co Pulse width sc. 300 us; duty cycle 32%.
Re=25§2, lAs=8.0A (See Figure 12)
