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high isolation capability and a low thermal re ..
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high isolation capability and a low thermal re ..
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IRFll3C20G
1nteroatktr?al
TOR Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
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TOR Rectifier
HEXFET® Power MOSFET
. Isolated Package
q High Voltage Isolatio ..
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high isolation capability and a low thermal re ..
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IRFIBC20
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=1.7A)
mterrtatiional
Rectifier
HEXFET® Power MOSFET
Description
Third Generation HEXFETS from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation--.: 2.5KVRMS ©
Sink to Lead Creepage Dist..-- 4.8mm
Dynamic dv/dt Rating
0 Low Thermal Resistance
PD-9.850
IlRFll3C20G
VDSS = 600V
RDS(0n) = 4.40
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, VGs itt 10 V 1.7
In © Tc = 100°C Continuous Drain Current, Vss © 10 V 1.1 A
los, Pulsed Drain Current (O 6.8 - -
Po @ To = 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 WPC
VGS Gate-to-Source Voltage i20 _y,
EAS Single Pulse Avalanche Energy © 84 ml
IAR Avalanche Current co 1.7 A
EAR Repetitive Avalanche Energy G) 3.0 - mJ
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns _
To Operating Junction and -55 to +150
Tsms Storage Temperature Flange "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) I
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 N-m)
Thermal Resistance
#fi#fl Parameter Min. Typ. Max. Units
Rac J.unt'."Ttoe'e. - - 4.1 o C) NV
RNA Junction-to-Ambient -.e... - 65
IRFlll3C20G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V VGs=0V, ID: 250p.A
AV(imyoss/ATo Breakdown Voltage Temp. Coefficient - 0.88 - Nrt Reference to 25°C, In: 1mA
Ros(0n) Static Drain-to-Source On-Resistance - - 4.4 n VGs=10V, 10:1.0A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250pA
gfs Forward Transconductance 1.4 - - S Vos=50V, |D=1.0A ©
. - - 100 Vos=600V, Ves=OV
loss Drain-to-Source Leakage Current - w 500 uA Vos=480V, Vas=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - -- -100 VGs=-20V
ch, Total Gate Charge - - 18 lo=2.0A
Qgs Gate-to-Source Charge - - 3.0 nC Vos=360V
di Gate-to-Drain ("Miller") Charge - -- 8.9 VGs=1OV See Fig. 6 and 13 Cs)
td(on) Turn-On Delay Time - 10 - VDD=300V
t, Rise Time - 23 - ns irs=2.0A
tum Turn-Off Delay Time - 30 - RG=18£2
tf Fall Time - 25 - RD:1SOQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttit(rll1./gi'/i.') D
nH from package egg)
Ls Internal Source inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 350 - Ves=0V
Cass Output Capacitance - 48 - pF Vns=25V
Crss Reverse Transfer Capacitance - 8.6 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - ...-. 1 7 MOSFET symbol D
(Body Diode) . A showing the L,-,--':
ISM Pulsed Source Current - - 6.8 integral reverse G :L
(Body Diode) (i) p-n junction diode. s
N/so Diode Forward Voltage - - 1.6 V TJ=25°C, Is=1.7A, Var-UN ©
in Reverse Recovery Time - 290 580 ns TJ=25°C, IF=2.0A
G, Reverse Recovery Charge - 0.65 1.3 110 di/dt=100A/us ©
ton" Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=53mH
Re=25§2, lAs=1.7A (See Figure 12)
© Isosz.2A, di/dtrcA0A/gs, VDDSV(BR)DSS.
TJS150°C
C) t=60s, f=60Hz
© Pulse width s; 300 us; duty cycle 32%.
