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IRFI840GLCIR N/a1050avai500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFI840GLCPBFIRN/a4avai500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI840GLC-IRFI840GLCPBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
'International
EOR Rectifier
PD-9.1208
IRFI840GLC
HEXFET® Power MOSFET
0 Ultra Low Gate Charge
o Reduced Gate Drive Requirement
0 Enhanced 30V Ves Rating
0 Isolated Package
o High Voltage Isolation: 2.5KVRMS ©
o Sink to Lead Creepage Dist.= 4.8mm
o Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFETs achieve significantly lower gate
charge over conventional MOSFETs. Utilizing advanced HEXFET technology,
the device improvements allow for reduced gate drive requirements, faster
switching speeds and increased total system savings.These device
improvements combined with the proven ruggedness and reliability that are
characteristic of HEXFETs offer the designer a new standard in power
VDSS = 500V
Ir, = 4.5A
RDS(on) Tl.": th85n
transistors for switching applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware.
'i1iiiiis,
The moulding compound used provides a high isolation capability and low T0220 FULLPAK
thermal resistance between the tab and external heatsink.
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vas @ 10 V 4.5
In @ To = 100°C Continuous Drain Current, Vas @ 10 V 2.9 A
IDM Pulsed Drain Current Ci) 18
Pro a Tc = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 WPC
Ves Gate-to-Source Voltage :30 V
EAs Single Pulse Avalanche Energy © 300 mJ
IAR Avalanche Current C) 4.5 A
EAR Repetitive Avalanche Energy co 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range L "C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf.in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Reuc Junction-to-Case _ --. - 3.1
. . oc/IN
Ram Junction-to-Ambient - - 65
Ci) Repetitive rating; pulse width limited by
max. junction temperature (Sed Figure 11)
© Vop=50V, starting TJ=25°C, L=26mH
Re=259, |As=4.SA (See Figure 12)
TJS150°C
© |so$8.0A, di/dts100A/us, VDDSV(BR)Dss,
IRFI840GLC Ttatt
Electrical Characteristics tii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(amoss Drain-to-Source Breakdown Voltage 500 - - V Vss=OV, lo: 250%
AV[BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.63 - V/°C Reference to 25°C, ID: 1mA
R05(on) Static Drain-to-Source On-Resistance -- - 0.85 n Ves=10V, kr=2.7A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vps=Ves, lo: 250%
ggs Forward Transconductance 4.0 - - S Vos=50V, Io=4.8A ©
loss Drain-to-Source Leakage Current I T....' 22550 pA 21:33:: V::::V TJ=125°C
lass Gate-to-Source Fonvard Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO Ver=4OV
ch, Total Gate Charge - - 39 b--8.0A
Qgs Gate-to-Source Charge - - 10 n0 Vos=4OOV
di Gate-to-Drain ("Milier") Charge - - 19 Ves=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 - Voo=250V
tr Rise Time - 25 - n s ID=8.OA
tast) Turn-Off Delay Time - 27 - RG=9,1Q
t, Fall Time - 19 - 90:30:: See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 'tr11g"lJ.lli/n1 I)
nH from package cg
Ls Internal Source Inductance - 7.5 - an center 6f
die contact 5
Cas Input Capacitance - 1 100 - VGs=0V
Coss Output Capacitance - 170 - pF V03: 25V
Css Reverse Transfer Capacitance - 18 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
is Continuous Source Current - - 4.5 rMOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 18 integral P"Y 6
(Body Diode) OD p-n Junction diode. s
Van Diode Forward Voltage - - 2.0 V TJ=25°C, Is=4.5A, Ves=0V ©
tn Reverse Recovery Time - 490 740 ns TJ=25°C, IF=8.0A
" Reverse Recovery Charge - 3.0 4.5 no di/dt=100A/ps ©
ton Forward Tum-On Time . intrinsic tum-on time is negiegible (tum-on is dorninated by Ls+Lo)
Notes:
© t=60s, f=60HZ
© Pulse width f. 300 us; duty cycle s2%.
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