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IRFI744G-IRFI744GPBF
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
ihlerinatiortal
PD-9.1002
142R Rectifier IRFI744G
HEXFET0 Power MOSFET
0 Isolated Package
tt High Voltage Isolation= 2.5KVRMS © D VDSS = 450V
0 Sink to Lead Creepage Dist.--- 4.8mm
0 Dynamic dv/dt Rating
o Low Thermal Resistance : r, RDS(on) = 0.639
s ID =4.9A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
- I - _Eamfwr _7 f "T. ": .::~IE£:: :T 63E
ID @ Tc = 25°C Continuous Drain Current, Vas_@ 10 y, I - 4.9 __f
lo © To = 102°C Eontinuous Drain Current, VGs @ 10 y, l_ - - 3.1 - I A
10M - Pulsed Drain_Curren_t Ci) - - - I _ 20 _ 11 __l
' Po © Tc = 25g Folder Di_s_sipatiol - - - --l- - - - - _40__ - - - - ' _w J
Linear Derating Eactor _ _ - - l - - 132 _ _ I W/°C_
VGs Gate-to-Sour) Voltgge h - LT - - - _320 _ - I _V
EAS V I Single F'ulse_Avalan_che Energy @_ - C- __ 130 -- _mJ
IAR Mvalanche Curre_nt Ci) - - _ 'I - - _4.9 _ - _V_A_ -
EAR t Repetitive Avalanche Energy (it T _ __4.0 ___iJL.
dv/dt Peak Diode Recovery dv/dt © __L 3.5 -- l/Ins J
l To Operating Junction and l -55 to +150 ll l
Tsm Storage Temperature Range __L_ J °C
Soldering Temperature, for 10 seconds l 300 (1.6mm from case) i i
Mounting Torq_ue, 6-32 or M3_screw L - 1O itioin (1 .1_N-m) L____J
Thermal Resistance
[ - - Earametgr - - l Min. , Typ. I Max l Lmits
Rar Junction-to-ease -- -- - I - _C_- - I 3.1 I °C/W
. . - - - I
Rem _ oJuetion-tocAmtoient, - - L -r__d L - _L 65 l __]
IRFI744G
Electrica1 Characteristics @ To = 25°C (unlessptherwise specified)
:Xtiiiiii)
- Parameter _ Min. Typ, _,) Max. I Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ' _450 -- I - ( V VGs=0V, ID: 250yA
AVpR)rosisihiTo Breakdqwn Voltage Temp. Coefficient - 0.59 I - ', WCC Reference to 25°C, In: 1mA
Rosmm Static Drain-to-Source, pn-Resistance - - l 0.63 ! Q VGs=10V, lo=2.9A ©
vesnh, Gate Threshold Voltage - _ 2.0 - 4.0 l V vos=ves, lo: 250%
Tps" Friwardjr1r1y-iucta_nsil. 3.3 l - 1 S Vos=50V. ID=2.9A ©
loss Drain-to-Source Leakage Current - - 25 I HA S VDS=450V' VGs=OV
- - 250 Vos=360V. VGs=OV, TJ=125°C
less Gate-to-Source Forward Leakage. _ - 100 n A VGs=20V . _
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg - ”’Total Gate (Sharge a - 80 ID;8.8A
Qgs 'Gatertorl3ourtoe Chafge - - 12 _ nC Vos=360V
di Gatd-toliorain ("Miller") Charge - - 41 sz=1ov See Fig, 6 and 13 ©
tdwn) Turn-On Delay Time - 8.7 - VDD=225V
tr Rise Time -- 28 - n s lro--8.8A
tam”) Tu m-Off Delay Time _ 58 - RG=9.1Q
& Fall Time - 7 27 - Ro=25§2 See Figure 10 ©
. 1 Between lead D
Lo internal Drain Inductance - 4.5 . - . ,
T i --- nH 1r,T,)r,'1pfli'fti),) fife
Ls : Internal Source Inductance - 7.5 - and center df
--.- - - _ H die contact s
Ciss - Input CaptTititnce - 1 1400 - VGs=0V
Coss Output Capacitance . - I T 370 - - PF V05: 25V
cuss, Reverse Transfer Capacitance - 140 V - f =1 .OMHz See Figure 5
Ji. Drain to Sink Capacitance - 12 . - pF f=1.0MHz
Source-Drain Ratings and Characteristics
--- - __ - _ Parameter Min. Typ. Max. Units Test Conditions
J ls - Continuous Source Current - - 4 9 MOSFET symbol D
(Body Diode) . l showing the
ISM Pulsed Source Current - - . 20 i integral reverse G
- 1 (Body Diode) C) _ V _ I l p-n junction diode. s
159 Diode Forward Voltage _ - - 2.0 V . TJ=25CC, Is=8.8A, Ves=OV ©
trr Reverse Recovery Time - 490 740 ns Tu=25''C, IF=8.8A
er Reverse Recovery Charge - 3.2 l 4.8 110 di/dt=1OOA/us (6)
Arr, I' Forward Turn-On Tir/e Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(i) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C. L=9.6mH
HG=25n, lAs=4.9A (See Figure 12)
© |soSB.8A, di/dtS2OOA/us, VDDSV(BR)Dss,
TJS150°C
© t=60s, f=60HZ
© Pulse width s: 300 ps; duty cycle 52%.
