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IRFI720GIRN/a50avai400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFI720GPBFIRN/a58avai400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI720G-IRFI720GPBF
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.834
IRFl720G
Ilntettatiitqt,tall
Tee Rectifier
HEXFET® Power MOSFET
o Isolated Package
tt High Voltage Isolation: 2.5KVRMS C5) D
o Sink to Lead Creepage Dist.-- 4.8mm
0 Dynamic dv/dt Rating
o Low Thermal Resistance
Voss = 400V
Rros(on) = 1.89
s ID = 2.6A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in 5gtiib
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica 'ii:li;ii)s,
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink ''tiiijj
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, Vas © 10 V 2.6
In @ To = 100°C Continuous Drain Current, Vas © 10 V 1.7 A
IDM Pulsed Drain Current co 10
Pa @ To = 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 WPC
Vas Gate-to-Source Voltage i20 V
EAs Single Pulse Avalanche Energy © 150 mJ
IAR Avalanche Current Ci) 2.6 A
EAR Repetitive Avalanche Energy C) ao mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min, Typ. Max. Units
ch Junction-to-Case - - 4.1 o C NV
Rem Junction-to-Ambient - - 65
IRFI720G
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
co VDD=50V, starting TJ=25°C, L=38mH
RG=25§2, 1As=2.6A (See Figure 12)
© Isoss.3A, di/de65A/ps, VDDSV(BR)DSS,
TJS150°C
Parameter Min, Typ. Max. Units Test Conditions
V(Bn)oss Drain-to-Source Breakdown Voltage 400 - - V Vas--0V, lo: 250pA
, AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.51 - VPC Reference to 25°C. 10: 1 mA
RDS(on) Static Drain-to-Source.On-Resistance - - 1.8 n Ves=10V, Io=1.6A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo--. 2501.1A
gfs Forward Transconductance 1.5 - -- S Vos=50V, ID=1.6A ©
loss Drain-to-Source Leakage Current - - 25 WA Vtos=400V, VGS=OV
- - 250 VDs=320V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -1OO Ves=-20V
Qg Total Gate Charge - - 20 |D=3.3A
Qgs Gate-to-Source Charge - - 3.3 nC Vos=320V
di Gate-to-Drain ("Miller") Charge - - 11 VGs=10V See Fig. 6 and 13 C4)
tum) Turn-On Delay Time - 10 - VDD=2OOV
tr Rise Time - 14 - ns lo=3.3A
tum) Turn-Off Delay Time - 3O - Ro.--18f2
tr Fall Time - 13 - Ro=56§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tt2t"('on.sti1nd.') D
nH from package egg
Ls Internal Source Inductance - 7.5 - Ind center 6f
die contact s
Cass Input Capacitance - 410 - Vss=OV
Cass 3 Output Capacitance - 120 - pF V05: 25V
Crss 5 Reverse Transfer Capacitance - 47 - f=1.0MHz See Figure 5
C i Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min, Typ, Max. Units Test Conditions
Is Continuous Source Current - -.- 2 6 MOSFET symbol D
(Body Diode) . A showing the L-a:
ISM Pulsed Source Current - - 10 integral reverge G Il
(Body Diode) co p-n junction diode. S
VSD Diode Forward Voltage - - 1.6 V TJ=25°C, ls=2.6A, Vss=0V ©
tn Reverse Recovery Time - 300 600 ns TJ=25°C, IF=3.3A
er Reverse Recovery Charge - 1.5 3.0 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+luo)
Notes:
© t=60s, f=60Hz
C4) Pulse width s; 300 us; duty cycle 32%.
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