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IRFI540GIRN/a411avai100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI540G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.643A
niennati'onal
19R Rectifier _ IRFl540G
HEXFET® Power MOSFET
0 Isolated Package
o High Voltage Isolation---: 2.5KVRMS C5)
0 Sink to Lead Creepage Dist.= 4.8mm
o 175°C Operating Temperature
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
VDSS = 100V
RDS(on) = 0.077Q
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in rigtiib'
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica 'i1)iiii1ie
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
- Parameter Max, Units
lo © Tc = 25°C Continuous Drain Current, Vca @ 10 V 17 _
Io @ To = 100°C Continuous Drain Current, Ves © 10 V 12 A
IDM Pulsed Drain Current Ci) 68
Po © To = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 WPC
Vas Gate-to-Source Voltage l $20 V
EAs Single Pulse Avalanche Energy © 720 ml
'AR Avalanche Current C) _____17____.___, A
EAR Repetitive Avalanche Energy (1) 4.8 airl
dv/dt Peggpiode Recovery dv/dt O 5.5 V/ns
To Operating Junction and -55 to +175 i
TSTG Storage Temperature Range - - ''C
Soldering Tempereygi, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 ongscrew __ 1 l 18ri_rtt1 .1 Mom)
Thermal Resistance
m Parameter Min. Typ. Max. Units
Flax; Junction-to-Case - - 3.1 o C /W
FINA Junction-to-Ambient - - 65
iRFl540G
Electrical Characteristics Iii! To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V Vas-UN, ID: 250pA _
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 ---. V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.077 n VGs=10V, ID=1OA ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo---. 250yA
gis Forward Transconductance 9.1 - -. S vos=5ov, |o=1OA ©
loss Drain-to-Source Leakage Current - - 25 pA Vos=100V, VGs=0V
- - 250 Vros=80V, VGs=0V, TJ=1SOOC
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
q, Total Gate Charge - - 72 ID--17A
Qgs Gate-to-Source Charge - - 11 n0 Vos=80V
di Gate-to-Drain ("Miller") Charge - - 32 Vss--10V See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 1 1 - VDD=50V
tr Rise Time - 44 - ns b--17A
td(off) Turn-Off Delay Time - 53 - Re=9.1Q
t. Fall Time - 43 - Ro=2.9§). See Figure 10 @
Ln Internal Drain Inductance - 4.5 - , 'ritnvr1frJ. ste'. ') D
nH from package egg
Ls Internal Source Inductance -_. 7.5 - an center 6f
die contact s
Ciss Input Capacitance - 1700 - VGs=0V
Coss Output Capacitance - 560 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current __ - 17 MOSFET symbol D
(Body Diode) A showing the '7
ISM Pulsed Source Current - - 68 integral reverse G :L
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage -.r-. - 2.5 V TJ=25°C, ls=17A, Vss--0V Cs)
trr Reverse Recovery Time - 180 360 ns TJ=25°C, Ir=17A
er Reverse Recovery Charge - 1.3 2.6 pC di/dt=100A/us C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=3.7mH
He=25§2, lAs=17A (See Figure 12)
co IsDS17A, di/dts200A/us, VDDSV(BR)Dss,
TJS175°C
© t=60s, f=60Hz
C4) Pulse width s: 300 us; duty cycle 52%.
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