IRFI530G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationTO-220 FULLPAKcapability and a low ..
IRFI540G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI620G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI624G ,250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI630G ,200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
IEBR
Rectifier
PD-9. 652A
IRFI630G
HEXFET® Power MOSFET
. Isolated ..
ISL6522CB ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) ControllerISL6522®Data Sheet November 2002 FN9030.3Buck and Synchronous Rectifier
ISL6522CBZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6522CR ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controllerfeatures. SeeTech JA Brief TB379.3. For θ , the "case temp" location is the center of the exposed m ..
ISL6522CRZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6522CV ,Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) ControllerISL6522®Data Sheet November 2002 FN9030.3Buck and Synchronous Rectifier
ISL6522CVZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
IRFI530G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
ktternatityrtall
Rectifier
PD-9.737
lRFl530G
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation= 2.5KVRMS © D V - 1 00V
0 Sink to Lead Creepage Dist..--- 4.8mm DSS -
tt 175°C Operating Temperature
o Dynamic dv/dt Rating G r, RDS(on) = 0.169
0 Low Thermal Resistance
s ID ICT. 9.7A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. ce,
The TO-220 Fullpak eliminates the need for additional insulating hardware in agiib'
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica 'it
barrier with standard TO-22O product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGs @ 10 V .1 9.7
lo © To = 100°C Continuous Drain Current, Vas © 10 V 6.9 A
IDM Pulsed Drain Current 6) 39
Pry @ Tc = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 WPC
. VGs Gate-to-Source Voltage 1 $20 V
EAS Single Pulse Avalanche Energy © I 100 mJ
IAR Avalanche Current C) l 9.7 l A
EAR Repetitive Avalanche Energy (l) l 4.2 '. mJ
dv/dt Peak Diode Recovery dv/dt G) 5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter ____Min I Typ Max. Units
ch J.unc.ti.on-.to-fai 1 - - 3.6 o C /W
Ram Junction-to-Ambient - - 65
|RF|530G
Electrical Characteristics @ To = 25°C (unless otherwise specified)
. Parameter Min. Typ. Max. Units Test Conditions
V(gmoss Drain-to-Source Breakdown Voltage 100 - - V Ves=0V, ID: 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.12 - V/°C. Reference to 25°C, In: 1 mA
Ros(on) Static Drain-to-Source On-Resistance - - 0.16 n Vas=10V, ln=5.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, lo: 250WA
gfs Forward Transconductance 4.0 - - S Vos=50V, |D=5.8A ©
. - - 25 VDs=100V, Vas-HN
loss Drain-to-Source Leakage Current - - 250 11A Vns=80V, Ves=0V, TJ=150° C
lass Gate-tty-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage .-.. - -100 Ves=-20V
Qg Total Gate Charge - - 33 lir--9.7A
Qgs Gate-to-Source Charge - - 5.4 nC Vos=80V
di Gate-to-Drain ("Miller") Charge .--. - 15 VGs=10V See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 8.6 - Voo=50V
tr Rise Time - 28 - ns |o=9.7A
td(off) Turn-Off Delay Time - 34 - RG=12Q
t: Fall Time - 25 -- RD=5.1Q See Figure 10 co
Lo Internal Drain Inductance - 4.5 - g '2t71 stir. ') D
nH from package 6Q:
Ls Internal Source Inductance - 7.5 - and center 6f Hi)
die contact 5
Ciss Input Capacitance - 670 - VGs=0V
Coss Output Capacitance - 250 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 60 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 9 7 MOSFET symbol D
(Body Diode) . A showing the Fir)
ISM Pulsed Source Current - - 39 integral reverse a LL
(Body Diode) (D p-n junction diode. S
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=9.7A, Ves=0V ©
trr Reverse Recovery Time - 150 280 ns TJ=25°C, |F=9.7A
er Reverse Recovery Charge - 0.85 1.7 PC di/dt=100A/us G)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C. L=1.6mH
Re=259, |As=9.7A (See Figure 12)
C3) ISDSQJA, di/dtsi140A/p1s, VDDSV(BR)DSS.
TJS175°C
© t=60s, f=60Hz
© Pulse width f 300 us; duty cycle 52%.
