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IRFI520N
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR Rectifier
PRELIMINARY
PD - 9.1362A
IRFl520N
HEXFET® Power MOSFET
0 Advanced Process Technology
q Isolated Package D
0 High Voltage Isolation = 2.5KVRMS (S) VDss = 100V
o Sink to Lead Creepage Dist. = 4.8mm
o Fully Avalanche Rated rn RDSM) = 0.209
Description s ID - 7.6A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient F,
device for use in a wide variety of applications. Fe',','.','...".,...
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab TO-220 FULLPAK
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, Vss @ 10V 7.6
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 5.3 A
IDM Pulsed Drain Current C)(5) 38
Po @Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.20 W/°C
VGS Gate-to-Source Voltage $20 V
EAs Single Pulse Avalanche Energy ©© 91 mJ
IAR Avalanche Current0D© 5.7 A
EAR Repetitive Avalanche Current® 3.0 mJ
dv/dt Peak Diode Recovery dv/dt (MD 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rauc J.unc.tlon-t.o-ee. - - 5.0 o C NV
ReJA Junction-to-Ambient - - 65
3/16/98
IRFl520N
International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250PA
AV(BR)DsslATJ Breakdown Voltage Temp. Coemcient - 0.11 - V/°C Reference to 25°C, ID = 1mA©
Rosmn) Static Drain-to-Source On-Resistance - - 0.20 Q VGS = 10V, ID = 4.3A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/ras = VGs, ID = 250pA
gfs Fon/vard Transconductance 2.7 - - S VDS = 25V, ID = 5.7A©
loss Drain-to-Source Leakage Current _- _- Ji, pA VS: =" T)):,'::'),, = 15 O'' C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 25 lo = 5.7A
Q95 Gate-to-Source Charge - - 4.4 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 11 l/ss = 10V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 4.5 - VDD = 50V
t, Rise Time - 23 - ID = 5.7A
tam Turn-Off Delay Time - 32 - ns Rs = 22n
tf Fall Time - 23 - Ro = 8.69, See Fig. 10 ©©
Ln Internal Drain Inductance - 4.5 - Between tal _ D
nH fmm (0.2K5m.) sii,C_-- ":;
Ls Internal Source Inductance - 7.5 - gggnc:::efg:die contact lit'- S/
Ciss Input Capacitance - 330 - Veg = 0V
Coss Output Capacitance - 92 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 7.6
(Body Diode) A showmg me
ISM Pulsed Source Current - - 38 integral reverse G
(Body Diode) COO) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 4.3A, VGS = 0V ©
trr Reverse Recovery Time - 99 150 ns T., = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge - 390 580 nC di/dt = 100/Vps Cr)6)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 259, IAS-- 5.7A. (See Figure 12)
© la, f 5.7A, di/dt S 240A/ps, VDD f V(BR)DSSI
T J 3 175°C
co Pulse width s: 300ps; duty cycle S 2%.
(s) t=60s, f=60Hz
© Uses IRF520N data and test conditions
