IRFI510G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.829
IRFl510G
International
irf.JA Rectifier
HEXFET® Power MOSFET
q Isolated Packa ..
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IRFI510G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.829
"RFI510G
International
142R Rectifier
HEXFET® Power MOSFET
o Isolated Package
0 High Voltage Isolation: 2.5KVRMS © D V - 100V
0 Sink to Lead Creepage Dist.= 4.8mm DSS -
0 175°C Operating Temperature
0 Dynamic dv/dt Rating
Low Thermal Resistance
RDS(On) = 0.54Q
s ID = 4.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-ga) Fullpak eliminates the need for additional insulating hardware in
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-22O product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing,
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter Max, Units
ID @ To = 25°C Continuous Drain Current, I/tss © 10 V 4.5
_lp @ To = 100°C Continuous Drain Current, Vas @ 10 V 3.2 A i
IDM Pulsed Drain Current co 18 J
Po @ Tc = 25°C Power Dissipation 27 w l
Linear Derating Factor 0.18 WPC I
Ves Gate-to-Source Voltage :20 V i
EAs Single Pulse Avalanche Energy (2) 60 mJ j
IAR Avalanche Current co 4.5 A l
EAR Repetitive Avalanche Energy C) 2.7 m] i
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns ,
Tu Operating Junction and -55 to +175 1
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m) _|
Thermal Resistance _
Parameter Min, Typ. Max, Units
Rate Junction-to-Case - - 5.5 o C NV
Rm Junction-to-Ambient - - 65 i
lRFl510G
Electrical Characteristics (ii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V I/ss-HN, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp, Coefficient - 0.63 - V/°C Reference to 25°C, ID: 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.54 n VGs=10V, |D=2.7A ©
Vesun) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, ID: 250pA
grs Forward Transconductance 1.2 - - S Vos=50V, ID=2.7A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=100V, l/ss-HN
- - 250 Vos=80V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - .'...- -100 VGs=-20V
ch Total Gate Charge - - 8.3 |D=5.6A
Qgs Gate-to-Source Charge - - 2.3 nC Vos=80V
di Gate-to-Drain ("Miller") Charge - - 3.8 Ves=10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 6.9 .._. VDD=50V
tr Rise Time - 16 - ns b-UMA
tam) Turn-Off Delay Time - 15 - Rs--24n
tf Fall Time - 9.4 - RD=8.4Q See Figure 10 ©
Lo Internal Drain Inductance ..H 4.5 - (;vrvnefazlgi‘xj!) D
nH from package GE:
Ls Internal Source Inductance - 7.5 - Ind center 6f pi
die contact s
Ciss Input Capacitance - 180 - VGs=0V
Coss Output Capacitance - 81 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 15 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
Is Continuous Source Current - - 4 5 MOSFET symbol D
(Body Diode) . A showing the b,-u-':
Iss, Pulsed Source Current ..- - 18 integral reverse G
(Body Diode) (O p-n junction diode. s _
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=4.5A, Vas=0V ©
trr Reverse Recovery Time - 100 200 ns TJ=25°C, IF=5.8A
Cln. , Reverse Recovery Charge - 0.44 0.88 wc di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=25V, starting TJ=25°C, L=4.4mH
RG--25n, lAs.=4.5A (See Figure 12)
© ISDSSBA, di/dts75A/us, VDDSV(BR)DSS.
TJS175°C
© t=60s, f=60Hz
© Pulse width 3 300 ps; duty cycle s2%.
